Low Power Optical Bistability in 1550 Nm VCSOAs

Douglas R. Jorgesen,Christopher F. Marki,Haijiang Zhang,Pengyue Wen,Sadik Esener

DOI: https://doi.org/10.1109/qels.2007.4431439

2007-01-01

Abstract:Clockwise and counterclockwise bistability are demonstrated in 1550 nm VCSOAs at input powers two orders of magnitude lower than previously. Butterfly bistability is also observed for the first time in VCSOAs.

What problem does this paper attempt to address?

Observation of counterclockwise, clockwise and butterfly bistabilty in 1550 nm VCSOAs.

Christopher F. Marki,Douglas R. Jorgesen,Haijiang Zhang,Pengyue Wen,Sadik C. Esener

DOI: https://doi.org/10.1364/OE.15.004953

IF: 3.8

2007-01-01

Optics Express

Abstract:In this paper, we report counter-clockwise, clockwise, and, for the first time to our knowledge, butterfly bistability in 1550 nm Vertical Cavity Semiconductor Optical Amplifiers (VCSOA). Bistable operation is experimentally observed for bias currents ranging from 66-122% of threshold with switching powers as low as 2 microW. These switching powers are two orders of magnitude lower than any previous results in 1550 nm VCSOAs. These switching powers are consistent with previous reports on optical bistability in 850 nm VCSOAs and provide an important step towards the realization of small footprint, low power optical logic/switching elements in the 1550 nm wavelength band.
Observation of Wavelength Bistability in 850nm Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs)

haijiang zhang,veronica gauss,pengyue wen,sadik c esener

DOI: https://doi.org/10.1364/FIO.2006.FWG2

2006-01-01

Abstract:The experimental observation of wavelength bistability in an 850nm VCSOA is reported. Clockwise hystereses are obtained with input wavelength sweeping when the input power is kept constant. Results are in good agreement with theoretical predictions.
Observation of wavelength and multiple bistabilities in 850nm Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs).

Haijiang Zhang,Veronica Gauss,Pengyue Wen,Sadik Esener

DOI: https://doi.org/10.1364/OE.15.011723

IF: 3.8

2007-01-01

Optics Express

Abstract:Both wavelength bistability (WB) and multiple bistability (MB) were predicted theoretically by Adams' model in resonant optical amplifiers. We report here, for the first time to our knowledge, their experimental observation in 850nm Vertical-Cavity Semiconductor Optical Amplifiers (VCSOA). Clockwise hysteresis of WB is observed at constant input power while the input wavelength is swept across the gain window. MB is observed at a fixed operation wavelength biased on the long-wavelength side of the two separated Polarization-Dependent Gain (PDG) windows of the VCSOA by sweeping the optical input. The polarization of the input is set to a fixed angle with respect to the two intrinsic principal axes of the VCSOA. Two MB levels were experimentally observed at 160 mu W and 320 mu W, respectively. These observations are in good agreement with theoretical prediction by Adams' model and may lead to multi-valued optical information manipulation. (c) 2007 Optical Society of America.
All-optical Oscillator Based on a Single Bistable Vertical-Cavity Semiconductor Optical Amplifier (VCSOA)

Haijiang Zhang,C.F. Marki,Matthias Groß,Pengyue Wen,Sadik C. Esener

DOI: https://doi.org/10.1109/cleo.2008.4551874

2008-01-01

Abstract:A novel all-optical oscillator is demonstrated for the first time by employing a cascadable VCSOA inverter in a closed optical loop, which generates a self-sustained square-like waveform with ∼80ps switching time and 5:1 extinction ratio.
Picosecond optical bistability in metallophthalocyanine-doped polymer film waveguides.

J Si,Y Wang,J Zhao,B Zou,P Ye,L Qiu,Y Shen,Z Cai,J Zhou

DOI: https://doi.org/10.1364/OL.21.000357

IF: 3.6

1996-01-01

Optics Letters

Abstract:Ultrafast optical bistability was observed in a planar optical waveguide made with a 2,9,16,23-tetraoctadecanoylamido-substituted vanadyl phthalocyanine-doped polystyrene film. Input-output curves with hysteresis characteristics were measured with laser pulses of 60-ps pulse width at 532 nm. The switchup and switchdown times were less than 10 and 20 ps, respectively. The origin of the nonlinearity giving rise to optical bistability was predominantly electronic effects. (C) 1996 Optical Society of America
Wavelength Switching and All-Optical Flip-Flop in Tunable V-cavity Laser

Jian-Jun He

DOI: https://doi.org/10.1109/piers.2016.7734973

2016-01-01

Abstract:With the development of intelligent broadband optical networks, tunable semiconductor lasers are becoming more and more important for wavelength routing and signal processing. A simple and compact widely tunable laser has recently been developed using half-wave coupled V-cavity. The size of the chip is only about 500 μm×300 μm, and the fabrication process is similar to a simple Fabry-Perot laser. It does not require any grating or epitaxial regrowth, and the wavelength can be switched from channel to channel using a single electrode control. The wavelength switching time is about 20 μs with current injection induced thermo-optic effect, without requiring any bandgap engineering during the device fabrication. By using quantum well intermixing to selectively blue-shift the bandgap of the waveguide in the tuning section, fast wavelength switching is realized with a response time of ~ 10 ns or less. Optical bistability is also observed in the V-cavity laser, which can be used for achieving all-optical flip-flop. The wavelength state of the V-cavity laser can be set and reset by injecting signal pulses at two different wavelengths. The pulse power for both set and reset signal is only about 1 pJ. Short response times of about 150 ps is measured for the flip-flop operation.
Low Power and Large Modulation Depth Optical Bistability in an Si Photonic Crystal L3 Cavity

Yong Zhang,Danping Li,Cheng Zeng,Xingzhi Qiu,Ge Gao,Yi Wang,Qingzhong Huang,Jinzhong Yu,Jinsong Xia

DOI: https://doi.org/10.1109/lpt.2014.2358254

IF: 2.6

2014-01-01

IEEE Photonics Technology Letters

Abstract:Optical bistability with low power and large modulation depth is observed in the silicon 2D photonic crystal 3 defect-long (L3) cavity coupling with a photonic crystal waveguide experimentally. The cavity-waveguide resonator system operates under the critical coupling condition. The triangular line shape of the cavity resonance and the hysteresis loop of the system is observed. The switching contrast is 7.7 dB and the modulation depth is 0.70 at the switching power of -12.1 dBm. A nonlinear coupled mode model is established to analyze the behavior of the cavity, and numerical simulation results are in good agreement with the experiment results.
Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser

Takashi Mori,Yasuhiro Yamayoshi,Hitoshi Kawaguchi

DOI: https://doi.org/10.1063/1.2181192

IF: 4

2006-03-06

Applied Physics Letters

Abstract:Subfemtojoule polarization bistable switching in a vertical-cavity surface-emitting laser (VCSEL) is experimentally demonstrated. All-optical flip-flop operation of the VCSEL was performed using two orthogonally polarized injection light pulses. The optimum wavelengths of the two injection pulses for achieving minimum switching power were different and corresponded to the lasing wavelengths of the two polarization states of the laser. The pulse width/switching frequency dependence of the injection pulses showed that a minimum switching energy was obtained at 1ns∕500MHz. A record low switching energy of 0.3fJ has been achieved as well as a record high switching frequency of 10GHz.

physics, applied
All-optical Flip-Flop Operation Based on Bistability in V-cavity Laser

Yingchen Wu,Yu Zhu,Xiaolu Liao,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1364/oe.24.012507

IF: 3.8

2016-01-01

Optics Express

Abstract:We theoretically analyzed and experimentally demonstrated an injection-locking based all-optical flip-flop memory using a simple and compact tunable V-cavity laser (VCL). A bistable region in the tuning characteristics of the VCL is employed for the flip-flop operation. The state of the VCL can be set and reset by injecting signal pulses at two different wavelengths. The pulse power for both set and reset signal is only about 1 pJ. Short response times of about 150 ps are measured for storing and erasing.
All-optical Bistable Switching and Signal Regeneration in a Semiconductor Layered Distributed-Feedback/fabry–perot Structure

J HE,M CADA,MA DUPERTUIS,D MARTIN,F MORIERGENOUD,C ROLLAND,AJ SPRINGTHORPE

DOI: https://doi.org/10.1063/1.109883

IF: 4

1993-01-01

Applied Physics Letters

Abstract:We report the experimental observation of optical bistable switching in a combined distributed-feedback/Fabry–Perot structure. The sample had a high switching contrast with almost zero reflectivity in the on-state. A turnoff time as short as 4 ns was measured. The threshold power for bistability was about 2 mW. Bistable switching with the memory effect and a potential application for all-optical signal regeneration were demonstrated.
High-contrast Optical Bistability Using a Subwavelength Epsilon-Near-zero Material.

Rui Wang,Futai Hu,Yuan Meng,Mali Gong,Qiang Liu

DOI: https://doi.org/10.1364/ol.481688

IF: 3.6

2023-01-01

Optics Letters

Abstract:Optical bistability opens up a promising avenue toward various optical nonlinear functions analogous to their electrical counterparts, such as switches, logic gates, and memory. Free-space bistable devices have unique advantages in large-scale integration. However, most proposed free-space schemes for optical bistability have limitations in one or more aspects of low contrast ratio, compromised compatibility, slow switching speed, and bulk size. Epsilon-near-zero (ENZ) materials have recently shown an ultrafast and giant optical nonlinearity within a subwavelength scale, potentially overcoming these obstacles. Using large-mobility indium-doped cadmium oxide (CdO) as the ENZ material, we numerically demonstrate two efficient schemes for high-contrast optical bistability within a deep subwavelength size based on the ENZ mode and the Berreman mode. The ENZ wavelength can be optically tuned with a typical time scale of sub-picoseconds, giving rise to a switchable bistability between the near-zero state and the high-reflection state. Our work contributes to the advances on compact and ultrafast all-optical signal processing.
Greatly reduced threshold power of optical bistability by using asymmetrical lineshape cavity

Lei Dai,Chun Jiang

DOI: https://doi.org/10.1364/JOSAB.26.000805

2009-01-01

Abstract:A photonic crystal waveguide-cavity structure with a partially reflecting element is exploited to achieve optical bistability. Analysis of the theoretical model and validation of the numerical simulation indicate that this structure shows an asymmetrical lineshape and a novel switching characteristic, with the nonlinear transmission power varying sharply in a very narrow linewidth range. The characteristic power can be decreased from 6.35 mW/mu m of the symmetrical lineshape to 0.604 mW/mu m of the asymmetrical one. Through the study of the quality factor of the cavity, the results show that the lower switch power of an asymmetrical lineshape is essentially due to the increased Q-factor, which causes more and more energy to be stored in the cavity. (c) 2009 Optical Society of America
Optical Bistability in Semiconductor Periodic Structures

J HE,M CADA

DOI: https://doi.org/10.1109/3.83375

IF: 2.5

1991-01-01

IEEE Journal of Quantum Electronics

Abstract:We report on a theoretical demonstration of optical bistability in periodic layered media, particularly in long-period GaAs-AlAs superlattices. The proposed structure consists of a periodic multilayer system, as opposed to previously demonstrated nonlinear bistable devices which employed Fabry-Perot etalons. The optical resonance effect which is essential for bistable devices is, in our case, induced by a refractive index modulation. The nonlinear active medium is distributed in the whole structure rather than placed between the two mirrors of a Fabry-Perot cavity. It is shown by a complete calculation of wave propagation in the periodic nonlinear medium that a multiple valued feature appears in the structure's nonlinear reflectivity spectrum. The input/output characteristics of the structure exhibit bistable hysteresis similar to that of a nonlinear Fabry-Perot etalon. Both the reflection and the transmission modes are analyzed. The intensity threshold for bistability is shown to be as low as 9 kW/cm2 for a 30-period GaAs-AlAs superlattice of a thickness of about 4-mu-m. The characteristics of this type of device are discussed and compared to those based on Fabry-Perot etalons.
Experimental and Theoretical Study of Wide Hysteresis Cycles in 1550 Nm VCSELs under Optical Injection.

Peng Guo,Weijian Yang,Devang Parekh,Connie J. Chang-Hasnain,Anshi Xu,Zhangyuan Chen

DOI: https://doi.org/10.1364/oe.21.003125

IF: 3.8

2013-01-01

Optics Express

Abstract:We present experimental results of output power bistability in a vertical-cavity surface-emitting laser under optical injection induced by frequency detuning or power variation of the master laser. An ultra-wide hysteresis cycle of 3.7 nm (473.3 GHz) is achieved through frequency detuning, which is more than 11 times wider than that achieved in the state-of-the-art (37 GHz). Furthermore, the width of injection power induced hysteresis cycle we achieved is as large as 7.3 dB. We theoretically analyzed the hysteresis cycles based on standard optical injection locking rate equations including the interference effect of master laser reflection and found excellent agreement with experimental results.
Investigation of numerical simulation on all-optical flip-flop stability maps of 1550nm vertical-cavity surface-emitting laser

Jun Li,Qing Xia,Xiaofa Wang

DOI: https://doi.org/10.1117/12.2284897

2017-01-01

Abstract:Based on the extended spin-flip model, the all-optical flip-flop stability maps of the 1550nm vertical-cavity surface-emitting laser have been studied. Theoretical results show that excellent agreement is found between theoretical and the reported experimental results in polarization switching point current which is equal to 1.95 times threshold. Furthermore, the polarization bistable region is wide which is from 1.05 to 1.95 times threshold. A new method is presented that uses power difference between two linear polarization modes as the judging criterion of trigger degree and stability maps of all-optical flip-flop operation under different injection parameters are obtained. By alternately injecting set and reset pulse with appropriate parameters, the mutual conversion switching between two polarization modes is realized, the feasibility of all-optical flip-flop operation is checked theoretically. The results show certain guiding significance on the experimental study on all optical buffer technology.
Optical bistability in a one-dimensional photonic crystal resonator using a reverse-biased pn-junction

Majid Sodagar,Mehdi Miri,Ali A. Eftekhar,Ali Adibi

DOI: https://doi.org/10.1364/OE.23.002676

2014-12-13

Abstract:Optical bistability provides a simple way to control light with light. We demonstrate low-power thermo-optical bistability caused by the Joule heating mechanism in a one-dimensional photonic crystal (PC) nanobeam resonator with a moderate quality factor (Q ~ 8900) with an embedded reverse-biased pn-junction. We show that the photocurrent induced by the linear absorption in this compact resonator considerably reduces the threshold optical power. The proposed approach substantially relaxes the requirements on the input optical power for achieving optical bistability and provides a reliable way to stabilize the bistable features of the device.

Optics
Wavelength-tunable optical spectral bistability in a ring laser using a semiconductor optical amplifier

bing wang,lei xu,varghese baby,ivan glesk,paul r prucnal

DOI: https://doi.org/10.1109/LEOS.2001.969031

2001-01-01

Abstract:Optical bistability at different wavelengths in a semiconductor fiber ring laser has been demonstrated. Changing the SOA bias current shows two stable optical outputs for any given current within the operating range. The laser can also be switched from one bistable state to another using optical control methods. Different wavelengths are selected by tuning the polarizer or the polarization controller in the laser cavity. These features will make the laser very promising for all-optical wavelength routing networking applications.
Bistability in an Active Fiber-Optical Parametric Oscillator

Feng Wen,Bao-Jian Wu,Yong Geng,Xing-Yu Zhou,Kun Qiu

DOI: https://doi.org/10.1364/acpc.2016.ath2a.3

2016-01-01

Abstract:Bistable behaviors are experimentally investigated in an active fiber-optical parametric oscillator by adjusting open-loop losses and pump powers. Optical bistability can be obtained at the switch-off state and the modulation depth of 16dB is achieved.
Ultralow Switching Threshold Optical Bistable Devices based on Epsilon-near-zero Ga 2 O 3 -SiC-Ag Multilayer Structures

Hu Sheng-Run,Ji Xue-Qiang,Wang Jin-Jin,Yan Jie-Yun,Zhang Tian-Yue,Li Pei-Gang,,,

DOI: https://doi.org/10.7498/aps.73.20231534

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:Optical bistability has attracted much attention due to its enormous potentials in all-optical operation and signal processing. However, the weak nonlinear responses typically require huge pump power to fulfill the threshold of the optical bistability, thus hindering the real applications. In this study, we propose an efficient optical bistable metamaterial that composes multi-layered Ga 2 O 3 -SiC-Ag metal-dielectric nanostructures. We not only achieve the substantial field enhancement by utilizing the epsilon – near - zero (ENZ) with SiC-Ag thin layers, but also incorporate the SiC material leveraging its significant optical nonlinear coefficient. In the structural design, the introduction of Ga 2 O 3 layers facilitate the light field concentration, contributing to the further reduction in threshold power for optical bistability, and also help to improve the physical and chemical stability of the device. The influences of the thickness and length of the ENZ layer on the optical bistability are systematically investigated using the finite element method. The results demonstrate that optical bistability becomes more pronounced with the increase of the thickness and length of ENZ layer, exhibiting a bistability switching threshold as low as~10 -6 W/cm 2 in the telecommunication band. Compared with the previously reported optical bistability based on ENZ mechanism, it shows a significant reduction by 9 orders of magnitude, demonstrating great application potentials in the fields of semiconductor devices, and photonic integrated circuits.

physics, multidisciplinary
Optical bistability on a silicon chip

Vilson R Almeida,Michal Lipson,Vilson R. Almeida

DOI: https://doi.org/10.1364/ol.29.002387

IF: 3.6

2004-10-15

Optics Letters

Abstract:We demonstrate, for the first time to our knowledge, optical bistability on a highly integrated silicon device, using a 5-microm-radius ring resonator. The strong light-confinement nature of the resonator induces nonlinear optical response with low pump power. We show that the optical bistability allows all-optical functionalities, such as switching and memory with microsecond time response and a modulation depth of 10 dB, driven by pump power as low as 45 microW. Silicon optical bistability relies on a fast thermal nonlinear optical effect presenting a 500-kHz modulation bandwidth.

optics

Low Power Optical Bistability in 1550 Nm VCSOAs

Observation of counterclockwise, clockwise and butterfly bistabilty in 1550 nm VCSOAs.

Observation of Wavelength Bistability in 850nm Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs)

Observation of wavelength and multiple bistabilities in 850nm Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs).

All-optical Oscillator Based on a Single Bistable Vertical-Cavity Semiconductor Optical Amplifier (VCSOA)

Picosecond optical bistability in metallophthalocyanine-doped polymer film waveguides.

Wavelength Switching and All-Optical Flip-Flop in Tunable V-cavity Laser

Low Power and Large Modulation Depth Optical Bistability in an Si Photonic Crystal L3 Cavity

Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser

All-optical Flip-Flop Operation Based on Bistability in V-cavity Laser

All-optical Bistable Switching and Signal Regeneration in a Semiconductor Layered Distributed-Feedback/fabry–perot Structure

High-contrast Optical Bistability Using a Subwavelength Epsilon-Near-zero Material.

Greatly reduced threshold power of optical bistability by using asymmetrical lineshape cavity

Optical Bistability in Semiconductor Periodic Structures

Experimental and Theoretical Study of Wide Hysteresis Cycles in 1550 Nm VCSELs under Optical Injection.

Investigation of numerical simulation on all-optical flip-flop stability maps of 1550nm vertical-cavity surface-emitting laser

Optical bistability in a one-dimensional photonic crystal resonator using a reverse-biased pn-junction

Wavelength-tunable optical spectral bistability in a ring laser using a semiconductor optical amplifier

Bistability in an Active Fiber-Optical Parametric Oscillator

Ultralow Switching Threshold Optical Bistable Devices based on Epsilon-near-zero Ga 2 O 3 -SiC-Ag Multilayer Structures

Optical bistability on a silicon chip