Abstract:InGaN-based materials and structures have attracted extensive attention in developing green light-emitting diodes (LEDs), but the fabrication of high-performance low-dimensional green LEDs is seriously limited to the sample preparation, device construction, green gap, and efficiency droop. In this work, a kind of green LED composed of p-type InGaN layers and a one-dimensional wired ZnO via Ga incorporation, featuring a green wavelength of 520.0 nm and a linewidth of about 34.0 nm, was designed. The LED characteristics, with respect to the peak wavelengths and linewidths, are almost constant at different input currents, indicating the insensibility to the quantum-confined Stark effect commonly observed in InGaN-based light sources. The color coordinate is really close to pure green (0.170, 0.797) of the Rec. 2020 standard. Significantly, the efficiency droop in the fabricated LED is temperate, suggesting that the recombination of carriers can occur toward the n-ZnO:Ga/p-InGaN interface instead of the p-InGaN region. With an increase in Ga-doping concentration in ZnO:Ga wires, the main EL peaks show a significant red shift from 520 to 584 nm in the green and yellow emission spectrum. This wavelength-tuning is further confirmed by the successfully varied color coordinates. The fabrication of one-dimensional wired green LEDs not only can break through the green gap but also can work as a potential candidate to developing solid-state lighting in the visible band for a wide range of practical applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.1c02650.Device preparation process of the n-ZnO:Ga MW/p-InGaN heterojunction green light sources; LED characterization of the as-constructed emission devices, with the wire having different sizes and surface morphologies; EL spectra of the as-constructed LEDs and their corresponding relative EQE in which the wires were selected from different samples (PDF)This article has not yet been cited by other publications.

InP nanowire light-emitting diodes with different pn-junction structures

Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures emitting in telecom band

Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect.

Light Emission Induced by the Indium Distribution in InGaN Nanowires

A Cathodoluminescence study of InP/InGaP axially heterostructured NWs for tandem solar cells

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Single nanowire green InGaN/GaN light emitting diodes.

Conductivity Enhancement by Slight Indium Doping in ZnO Nanowires for Optoelectronic Applications

Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped Zno Nanowires

Zincblende InAsxP1- x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Manipulation of Polarization Characteristics in Wurtzite ΙΙΙ-nitride Nanowires for Linearly Polarized Emission

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Axial GaN Nanowire‐Based LEDs

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p~+-Si Heterostructures

Wurtzite InAs Nanocrystals with Short-Wavelength Infrared Emission Synthesized through the Cation Exchange of Cu 3 As Nanocrystals

Wavelength-Tunable Green Light Sources Based on ZnO:Ga Nanowire/p-InGaN Heterojunctions

Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit

InGaN/GaN multi-quantum-well nanowires and light emitting

Electrical And Photoresponse Properties Of An Intramolecular P-N Homojunction In Single Phosphorus-Doped Zno Nanowires