Abstract:Journal of Circuits, Systems and Computers, Ahead of Print. This research work focuses on implementation of the FinFET-based complementary metal-oxide-semiconductor (CMOS) Full Adder circuits for different transistor configurations using ASAP7 FinFET model. First, this work examines FinFET-based AND-OR-invert (AOI) gates using different topologies, and second, a FinFET-based CMOS Full Adder circuit at the 7[math]nm technology node is analyzed with respect to its process, voltage and temperature (PVT) variability effect measured in terms of the normalized standard deviation of different performance metrics. The comparison is made between conventional (CFFA1) and proposed (FFA2, FFA3, FFA4, FFA5, FFA6, FFA7 and FFA8) FinFET-based CMOS full adder circuits. The aim is to determine the optimal design configuration of the FinFET full adder circuit with the minimum impact of PVT variability. On examining the power delay product (PDP) variability, it is found that variations in FFA2, FFA3, FFA4, FFA5, FFA6, FFA7 and FFA8 are significantly lower than CFFA1 by 6.30%, 4.68%, 10.30%, 65.48%, 68.05%, 65.61% and 17.20%, respectively. Among all the proposed configurations, normalized standard deviation [math] for the PDP metric is lowest in FFA6, followed by FFA7, FFA5, FFA8, FFA4, FFA2 and FFA3. The normalized standard deviation [math] for power dissipation, however, is lowest in FFA8. In addition, a layout comparison analysis of conventional and proposed full adder circuits reveals that FFA7 has the least area, followed by FFA8, FFA6, FFA5, FFA3, FFA4, FFA2 and CFFA1. The area of FFA2, FFA3, FFA4, FFA5 and FFA6 has decreased by 3.29%, 3.51%, 3.50%, 5.14% and 5.52%, while FFA7 and FFA8 have experienced a decrease in area by 13.87% and 14.36%, respectively, as compared to conventional CFFA1. The proposed layout of FinFET-based CMOS Full Adders can be directly transferred into the foundry's production line for manufacturing purposes. The overall investigation led us to conclude that FFA8 is the most efficient of all due to the lowest power variation, lower delay variation and lower PDP variation, moreover it has a reduced layout area among all the discussed designs. However, there is a tradeoff in terms of penalty in nominal power, propagation delay and PDP in the proposed topologies.

Design and Power Dissipation Consideration of PFAL CMOS V/S Conventional CMOS Based 2:1 Multiplexer and Full Adder

Low power-area designs of 1bit full adder in cadence virtuoso platform

Ultra-low Power Dissipation of Improved Complementary Pass-Transistor Adiabatic Logic Circuits Based on FinFETs

Low power adders using asynchronous pipelined modified low voltage MCML for signal processing and communication applications

Low Power Shift and Add Multiplier Design

Design of Low Power 64-Bit Hybrid Full Adder

CMOS Low Power Cell Library For Digital Design

Design and Simulation of FinFET based digital circuits for low power applications

Cost Efficient Design of Reversible Adder Circuits for Low Power Applications

Design of low power 16-bit counter with Programmable Combinational Logic and Integrated Clock Gating using 16-nm technology

Low-Power Pass-Transistor Logic-Based Full Adder and 8-Bit Multiplier

An Overview of Low-Power Digital CMOS Design

Low power, less area, and highly efficient hybrid 1-bit full adder

Design of Adiabatic MTJ-CMOS Hybrid Circuits

FinFET-based Low-power Improved PDP 4:2 Approximate Compressor Design

Impact of Variability on Novel Transistor Configurations in Adder Circuits at 7[math]nm FinFET Technology

Pass-Transistor Adiabatic Logic Circuits with NMOS Pull-Down Configuration and Feedback Structure

Implementation of Energy Efficient gates using Adiabatic Logic for Low Power Applications

Design and Performance Investigation of Tunnel-FET based energy efficient Approximate and Accurate adders targeted towards low power IoT nodes

Energy-Efficient Design and CNFET Implementation of GDI-Based Ternary Prefix Adders

Single bit full adder design using 8 transistors with novel 3 transistors XNOR gate