Preparation of TiO2-x film with a high TCR performance for uncooled thermal sensor

Qiming Zhang,Xiaoyan Peng
DOI: https://doi.org/10.1117/12.2603056
2021-07-02
Abstract:In this work, oxygen vacancy TiO2-x films were prepared by Electron Beam Evaporation (EBE) and Microwave Plasma Etching (MPE) treatment under Ar/H2 (argon/hydrogen) atmosphere for the uncooled infrared thermal sensor. The structure of the films was characterized by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscopy (FE-SEM). TiO2-x film has high resistance temperature coefficient (TCR) due to the structural transition and the oxygen vacancy produced during MPE process, which suitable for uncooled infrared thermal sensor. It can be concluded that the MPE is a fast, simple, and annealing-free treatment method to provide a constructive way to optimize the TCR of TiO2-x films.
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