Abstract:Colloidal quantum dots (CQDs) are a desirable platform for the development of next-generation infrared (IR) detectors thanks to their scalable synthesis, tunable optoelectronic properties, CMOS compatibility, and monolithic integration. However, CQD-based IR detectors typically have lower quantum efficiencies than epitaxial semiconductors and still require cryogenic cooling to achieve background-limited infrared photodetection. Developing CQD-based IR detectors that achieve state-of-the-art performance could bridge the gap between low-cost and high operating temperature detectors for IR sensing, especially for MWIR capabilities. Such a technology could significantly enable the advancement of compact, lightweight, and low-cost infrared systems for higher volume applications such as unmanned drone surveillance, driver-assisted vehicle navigation in low-visibility environments, and soldiermountable visual systems for advanced situational awareness. A systematic approach to materials development and detector design that relates material synthesis to detector optoelectronic properties will accelerate the development of CQD-based IR detector technologies. Such a system has not been explicitly established for CQD materials and their IR detectors. In this report, a process using a combination of empirical and numerical approaches has been described to guide and accelerate the development of CQD-based IR detectors. HgTe CQDs, one of the more mature IR CQD materials, was studied as a model system to provide useful feedback for establishing design rules and relationships between synthesis, material properties, and detector performance. Improvements to the performance of mid-wave infrared HgTe CQD photodetectors as an outcome of this study are demonstrated.

Development of high-performance graphene-HgCdTe detector technology for mid-wave infrared applications

Doping and Transfer of High Mobility Graphene Bilayers for Room Temperature Mid-Wave Infrared Photodetectors

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Ultrahigh Photogain Short-Wave Infrared Detectors Enabled by Integrating Graphene and Hyperdoped Silicon

Development of high-speed quantum dots/graphene infrared detectors for uncooled infrared imaging

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Waveguide-integrated mid-infrared photodetection using graphene on a scalable chalcogenide glass platform

High-Efficiency Infrared Sensing with Optically Excited Graphene-Transition Metal Dichalcogenide Heterostructures.

Anomalous Temperature Coefficient of Resistance in Graphene Nanowalls/polymer Films and Applications in Infrared Photodetectors

High‐Speed Short Infrared Detector Based on Vertical Gr/Se0.2Te0.8/GaAs Heterojunction

Scalable fabrication of long-wave infrared PtSe 2 -G heterostructure array photodetectors

Spectrally Tunable Ultrafast Long Wave Infrared Detection at Room Temperature

Fast Uncooled Mid‐Wavelength Infrared Photodetectors with Heterostructures of van der Waals on Epitaxial HgCdTe

Scalable Fabrication Of Long-Wave Infrared Ptse2-G Heterostructure Array Photodetectors

Experimental Determination of the Dependence Between Spectral Response and Current–Voltage Characteristics for MWIR HgCdTe Detectors

A systematic approach to develop high-performance colloidal quantum dot infrared photodetectors

Synergistic-potential Engineering Enables High-Efficiency Graphene Photodetectors for Near- to Mid-Infrared Light

Room-Temperature Blackbody-Sensitive and Fast Infrared Photodetectors Based on 2D Tellurium/Graphene Van der Waals Heterojunction

Dramatic Increase in SWIR Detection for GeSn Strip Detector with Graphene Hybrid Structure

Plasmonically enhanced spectrally selective narrowband MWIR and LWIR light detection based on hybrid nanopatterned graphene and phase changing vanadium oxide heterostructure operating close to room temperature

Schottky Barrier Height Modification of Graphene/Ge by Al2O3 Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors