A systematic approach to develop high-performance colloidal quantum dot infrared photodetectors

Matthew M. Ackerman,John C. Peterson,Philippe Guyot-Sionnest

DOI: https://doi.org/10.1117/12.3026847

2024-06-07

Abstract:Colloidal quantum dots (CQDs) are a desirable platform for the development of next-generation infrared (IR) detectors thanks to their scalable synthesis, tunable optoelectronic properties, CMOS compatibility, and monolithic integration. However, CQD-based IR detectors typically have lower quantum efficiencies than epitaxial semiconductors and still require cryogenic cooling to achieve background-limited infrared photodetection. Developing CQD-based IR detectors that achieve state-of-the-art performance could bridge the gap between low-cost and high operating temperature detectors for IR sensing, especially for MWIR capabilities. Such a technology could significantly enable the advancement of compact, lightweight, and low-cost infrared systems for higher volume applications such as unmanned drone surveillance, driver-assisted vehicle navigation in low-visibility environments, and soldiermountable visual systems for advanced situational awareness. A systematic approach to materials development and detector design that relates material synthesis to detector optoelectronic properties will accelerate the development of CQD-based IR detector technologies. Such a system has not been explicitly established for CQD materials and their IR detectors. In this report, a process using a combination of empirical and numerical approaches has been described to guide and accelerate the development of CQD-based IR detectors. HgTe CQDs, one of the more mature IR CQD materials, was studied as a model system to provide useful feedback for establishing design rules and relationships between synthesis, material properties, and detector performance. Improvements to the performance of mid-wave infrared HgTe CQD photodetectors as an outcome of this study are demonstrated.

Materials Science,Physics,Engineering