Structural, morphological and optoelectronic properties of screen-printed film deposited using Sb2Se3 nanowires

Sushil Kumar,Parly,Riya,M. P. Saravanan,Uday Deshpande,R. Venkatesh
DOI: https://doi.org/10.1063/5.0060953
2021-01-01
Abstract:Structural, morphological and Optoelectronic properties of Sb2Se3 film prepared by optimized screen-printing method is investigated and presented in this work. Sb2Se3 nanowires synthesized by microwave assisted solvothermal method along with ethylene glycol is used as the ink for the preparation of Sb2Se3 screen printed film. Structural analysis confirms the orthorhombic phase while the energy dispersive spectroscopy confirms the formation of Sb2Se3 composition. Crystallite size of the nanocrystalline powder (film) is found to be 60nm (104nm). The surface morphological properties as investigated from field emission scanning electron microscope (FESEM) show that the film is covered with nanowires of length 1-3µm and diameter 100-200nm uniformly distributed over the substrate but agglomerated uniformly as a spherical particle with diameter of ∼0.8µm. Interestingly, optoelectronic properties of the film and nanocrystalline powder show a band gap value of 1.19eV and 1.22eV respectively with an infinitesimal change in the band gap of the order of 0.03eV which is in correspondence with the morphological properties. Sb2Se3 being a potential material for solar cells, photodetectors and thermoelectric applications, this combination of fast and facile solvent-mediated microwave synthesis and screen-printing approach exhibits importance towards the wearable technology application for harvesting alternate electrical energy.
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