Abstract:The combined effect of P-doping and surface-termination on the energetics, and especially the electronic structure, of a diamond (100) surface, has in the present study been investigated by using a Density Functional Theory method. The diamond surface was terminated with any of the following species: H, F, OH, Obridge and NH2 . These adsorbates have earlier experimentally been proven crucial for e.g. applications based on surface electrochemistry. The observed results were analysed with the purpose to obtain a deeper knowledge about the atomic-level cause to the observed effects by the P doping and surface termination. The P dopant was found to have a very minor influence on the averaged adsorption energy for the various terminating species (i.e. with less than 0.17 eV). Moreover, the adsorbates were found to reduce the stability of the P-dopant in the diamond lattice. When analysing the results of the calculated partial density of states, the P dopant was found to contribute with band gap states below the conduction band, out of which one is a donor band. In addition, the surfaces with their terminating species will contribute with empty band gap states just below the CBM of the diamond surfaces. Hence, the combination of P doping and surface termination will induce both donor and acceptor states in the diamond surface band gap, which will improve the usefulness of these specific diamond surfaces in various electronic devices. The work function of a diamond surface is one specific properties that will be affected by substitutional doping and surface termination. Within the present study, the terminating species were found to render a strong impact on the surface work function (as compared to a non-terminated diamond (100)-2x1 surface), with calculated work function values that were even further decreased by P-doping.

Work function, band bending, and electron affinity in surface conducting (100) diamond

Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

Seebeck Measurements of N-Doped Diamond Thin Film

The Combined Influence of Dopant Species and Surface Termination on the Electronic Properties of Diamond Surfaces

Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers

Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy

A Theoretical Study of the Energetic Stability and Electronic Structure of Terminated and P-Doped Diamond (100)-2x1 Surfaces

Electron Field Emission from Diamond-Like Carbon

Work function and electron affinity of the fluorine-terminated (100) diamond surface

Tunable electronic properties of diamond (100) surface via boron-nitrogen co-termination: A first-principles study

Fermi level on hydrogen terminated diamond surfaces

High elastic moduli, controllable bandgap and extraordinary carrier mobility in single-layer diamond

Low dimensionality of the diamond surface conductivity

Electronic Properties of Hydrogen- and Oxygen-Terminated Diamond Surfaces Exposed to the Air

Insight into BS ratio model and surface atom interactions of co-doping diamond: First-principles studies

Heteroatom Functionalization of H-Terminated Diamond Surfaces

The Diamond (111) Surface Reconstruction and Epitaxial Graphene Interface

Fermi level pinning by defects can explain the large reported carbon 1s binding energy variations in diamond

Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces

Effect of Surface Termination on Electronic Structure of Nano-Crystalline Diamond Film

Impact of surface treatments on the electron affinity of nitrogen-doped ultrananocrystalline diamond