Abstract:The two main polymorphs of boron nitride are hexagonal (h-BN) and cubic (c-BN) phases and both show attractive material properties to be employed under extreme environments. h-BN is also known as "white graphene" due to the matching hexagonal crystal symmetry and shows a layered structure which provides advantages as a lubricant material and as gate dielectrics for two-dimensional (2D) transistor channels. On the other hand, c-BN is analogous to another important elemental carbon material, diamond. While the mechanical strength of c-BN is lower than diamond, the thermal and chemical stability is even superior. Both h-BN and c-BN films are therefore strong candidates for applications under harsh ambient, including high-temperature, high-pressure, and corroding factors. BN films and coatings are conventionally grown using high-temperature CVD methods with typical substrate temperatures over 1000 o C. To reduce the deposition temperatures of this material while preserving the attractive crystal properties, alternative lower temperature physical and chemical vapor deposition strategies have been offered in the literature. Plasma-enhanced atomic layer deposition (PEALD) provides significant advantages over other methods such as precision thickness control, ultimate conformality, while reducing the growth temperature substantially. In our previous work, we had demonstrated the crystalline synthesis of h-BN films at substrate temperatures as low as 350 o C, while no growth was observed at lower substrate temperatures. In this work, we aim to demonstrate the feasibility of growing c-BN at substrate temperatures reaching 200 o C via a customized PEALD reactor featuring a large-diameter capacitively-coupled hollow-cathode plasma source with a relatively short source-to-substrate distance. We used Si(100), sapphire, and glass as the substrates to deposit the films. The growth temperature is kept between 150 and 250 °C, 10 sccm of N 2 flow is used as a carrier gas and Ar-purging gas flow was kept at 50 sccm. The triethylboron (TEB) precursor and various nitrogen plasma chemistries including different compositions of N 2 , H 2 , and Ar gases are utilized. The optimized growth condition is determined from in-situ monitored saturation studies, where the growth-per-cycle (GPC) parameter is noted for different precursor pulse time (15 and 30 ms), rf-plasma power (100 W to 250 W) and plasma-gas chemistries (N 2 -only, N 2 /H 2 , Ar/N 2 , Ar/N 2 /H 2 at varying ratios). While the 200 °C as-grown BN films exhibited nanocrystalline c-BN with relatively weak crystal peaks as verified by XRD measurements, vacuum annealing at 5 mTorr N 2 flow and 700 °C transformed the film structure into single-phase polycrystalline c-BN. The spectroscopic ellipsometer, x-ray reflectivity (XRR), and x-ray photoelectron spectroscopy (XPS) studies will be presented as well as the influence of post-deposition vacuum annealing to further improve the crystalline structure of c-BN films. Basic electrical properties of the grown BN films will be characterized using metal-insulator-semiconductor (MIS) diode temperature-dependent current-voltage (I-V) measurements. A specific effort will be devoted to enhance the as-grown film crystal properties via implementing novel atomic layer plasma annealing processes, which showed its potential for the ultrawide bandgap Ga 2 O 3 alloy. Another research question to be investigated is whether there is a possibility of tuning the material phase from cubic to hexagonal by carefully adjusting growth and in-situ Ar-plasma annealing conditions.

Synthesis of highly ordered hBN in presence of group I/IIA carbonates by solid state reaction

From Highly Purified Boron Nitride to Boron Nitride‐Based Heterostructures: an Inorganic Precursor‐Based Strategy

Construction of a Nanoporous Highly Crystalline Hexagonal Boron Nitride from an Amorphous Precursor for Catalytic Dehydrogenation.

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Advanced synthesis of highly crystallized hexagonal boron nitride by coupling polymer-derived ceramics and spark plasma sintering processes—influence of the crystallization promoter and sintering temperature

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Small onion-like BN leads to ultrafine-twinned cubic BN

Improving Formation Conditions and Properties of h BN Nanosheets Through BaF2-assisted Polymer Derived Ceramics (PDCs) Technique

Synthesis and Modification of Boron Nitride nanotubes using ion implantation

Preparation of Thin-Layered Hexagonal Boron Nitride Nanosheet with Oxygen Doping

Ni Foam Assisted Synthesis of High Quality Hexagonal Boron Nitride with Large Domain Size and Controllable Thickness

Morphology, Ordering, Stability, and Electronic Structure of Carbon‐Doped Hexagonal Boron Nitride

Synthesis of polycrystalline boron nitride nanotubes with Lead(II) oxide and Iron(III) nitrate nonahydrate as promoters

Synthesis of hexagonal boron nitride 2D layers using polymer derived ceramics route and derivatives

Hexagonal boron nitride crystal growth in the Li3BN2-BN system

Low-Temperature Self-Limiting Growth of Cubic Boron Nitride Via Hollow-Cathode Plasma-Enhanced Atomic Layer Deposition

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Thickness-Controlled Synthesis of Uniform Hexagonal Boron Nitride Films on Metal Alloys by Chemical Vapor Deposition

Formation of nanocrystalline BN with a simple chemical route

Synthesis Of Boron Nitride Nanowires

One-Step Solid State Reaction to Synthesis of Hexagonal BN Crystals with Rod-Like Morphology