Indirect-to-Direct Band Gap Crossover in Few-Layer Transition Metal Dichalcogenides: A Theoretical Prediction

Yajing Sun,Dong Wang,Zhigang Shuai
DOI: https://doi.org/10.1021/acs.jpcc.6b08748
2016-09-14
The Journal of Physical Chemistry C
Abstract:Layered transition metal dichalcogenides (TMDs) have been found to exhibit the indirect-to-direct band gap transition when exfoliated from bulk to a single monolayer. Through first-principles calculations, we predict that such a transition can happen at bilayer for 2H-WSe2 and at tetralayer for 2H-WTe2. We find that the transition can be ascribed to the competition between spin–orbit coupling and interlayer coupling interactions, the former leading to appreciable splittings at the K point and the latter to splittings at the Γ point of the valence band. It is shown that stronger spin–orbit coupling tends to favor transition at a larger number of layers. These results provide insights into the valley degeneracy of the band edges and the valley-dependent optical transitions in few-layer TMDs for quantum control in valley-electronics.
chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
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