Abstract:We probe the room temperature photoluminescence of $N$-layer molybdenum ditelluride (MoTe$_2$) in the continuous wave (cw) regime. The photoluminescence quantum yield of monolayer MoTe$_2$ is three times larger than in bilayer MoTe$_2$ and forty times greater than in the bulk limit. Mono- and bilayer MoTe$_2$ display almost symmetric emission lines at $1.10~\rm eV$ and $1.07~\rm eV$, respectively, which predominantly arise from direct radiative recombination of the A exciton. In contrast, $N\geq3-$layer MoTe$_2$ exhibits a much reduced photoluminescence quantum yield and a broader, redshifted and seemingly bimodal photoluminescence spectrum. The low- and high-energy contributions are attributed to emission from the indirect and direct optical band gaps, respectively. Bulk MoTe$_2$ displays a broad emission line with a dominant contribution at 0.94~eV that is assigned to emission from the indirect optical band gap. As compared to related systems (such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$), the smaller energy difference between the monolayer direct optical band gap and the bulk indirect optical band gap leads to a smoother increase of the photoluminescence quantum yield as $N$ decreases. In addition, we study the evolution of the photoluminescence intensity in monolayer MoTe$_2$ as a function of the exciton formation rate $W_\mathrm{abs}$ up to $3.6\times 10^{22}~\rm{cm}^{-2} s^{-1}$. The lineshape of the photoluminescence spectrum remains largely independent of $W_\mathrm{abs}$, whereas the photoluminescence intensity grows sub-linearly above $W_\mathrm{abs}\sim 10^{21}~\rm cm^{-2} s^{-1}$. This behavior is assigned to exciton-exciton annihilation and is well-captured by an elementary rate equation model.

Indirect-to-direct band-gap crossover in few-layer MoTe$_2$

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Tuning Band Gaps in Twisted Bilayer MoS_2

Direct versus indirect band gap emission and exciton-exciton annihilation in atomically thin molybdenum ditelluride (MoTe$_2$)

Unraveling the Origin of Dominant Exciton and Band Structure Details in Bilayer MoTe2

Bandgap opening in few-layered monoclinic MoTe2

Indirect-to-direct band gap crossover of single walled MoS$_2$ nanotubes

Bandgap Opening in MoTe2 Thin Flakes Induced by Surface Oxidation

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

Indirect-to-Direct Band Gap Crossover in Few-Layer Transition Metal Dichalcogenides: A Theoretical Prediction

A natural indirect-to-direct band gap transition in artificially fabricated MoS2 and MoSe2 flowers

Phonon Softening and Direct to Indirect Bandgap Crossover in Strained Single Layer MoSe2

Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS2, MoSe2, MoTe2, WS2, and WSe2 Crystals

Giant Bandgap Renormalization and Excitonic Effects in A Monolayer Transition Metal Dichalcogenide Semiconductor

Rydberg Excitons and Trions in Monolayer MoTe$_2$

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

Tendency of Gap Opening in Semimetal 1T′‐MoTe 2 with Proximity to a 3D Topological Insulator

Tuning electronic properties in transition metal dichalcogenides MX$_2$ (M= Mo/W, X= S/Se) heterobilayers with strain and twist angle

Controllable 2H-to-1t' Phase Transition in Few-Layer MoTe2.