Direct versus indirect band gap emission and exciton-exciton annihilation in atomically thin molybdenum ditelluride (MoTe$_2$)

Guillaume Froehlicher,Etienne Lorchat,Stéphane Berciaud

DOI: https://doi.org/10.1103/PhysRevB.94.085429

2016-08-19

Abstract:We probe the room temperature photoluminescence of $N$-layer molybdenum ditelluride (MoTe$_2$) in the continuous wave (cw) regime. The photoluminescence quantum yield of monolayer MoTe$_2$ is three times larger than in bilayer MoTe$_2$ and forty times greater than in the bulk limit. Mono- and bilayer MoTe$_2$ display almost symmetric emission lines at $1.10~\rm eV$ and $1.07~\rm eV$, respectively, which predominantly arise from direct radiative recombination of the A exciton. In contrast, $N\geq3-$layer MoTe$_2$ exhibits a much reduced photoluminescence quantum yield and a broader, redshifted and seemingly bimodal photoluminescence spectrum. The low- and high-energy contributions are attributed to emission from the indirect and direct optical band gaps, respectively. Bulk MoTe$_2$ displays a broad emission line with a dominant contribution at 0.94~eV that is assigned to emission from the indirect optical band gap. As compared to related systems (such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$), the smaller energy difference between the monolayer direct optical band gap and the bulk indirect optical band gap leads to a smoother increase of the photoluminescence quantum yield as $N$ decreases. In addition, we study the evolution of the photoluminescence intensity in monolayer MoTe$_2$ as a function of the exciton formation rate $W_\mathrm{abs}$ up to $3.6\times 10^{22}~\rm{cm}^{-2} s^{-1}$. The lineshape of the photoluminescence spectrum remains largely independent of $W_\mathrm{abs}$, whereas the photoluminescence intensity grows sub-linearly above $W_\mathrm{abs}\sim 10^{21}~\rm cm^{-2} s^{-1}$. This behavior is assigned to exciton-exciton annihilation and is well-captured by an elementary rate equation model.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the photoluminescence properties of molybdenum ditelluride (MoTe₂) with different numbers of layers at room temperature, especially the conversion mechanism between direct - band - gap and indirect - band - gap emissions and the exciton - exciton annihilation phenomenon. Specifically:

1. **Change in band - gap properties**: Researchers are concerned with how the optical band - gap of the material changes from an indirect band - gap to a direct band - gap in the process from the bulk material to monolayer MoTe₂. This involves the changes in the photoluminescence quantum yield and spectral characteristics of MoTe₂ with different numbers of layers.

2. **Photoluminescence properties**: The room - temperature photoluminescence spectra of N - layer (N = 1 to 7 layers and the bulk material) MoTe₂ were measured by continuous - wave (cw) excitation, and the characteristics of these spectra changing with the number of layers were analyzed. In particular, they found that monolayer MoTe₂ has a distinct direct - band - gap emission, while three layers and above exhibit a more complex double - peak structure, corresponding to direct and indirect - band - gap emissions respectively.

3. **Exciton - exciton annihilation**: For monolayer MoTe₂, a sub - linearly increasing photoluminescence intensity was observed under the condition of a high exciton formation rate, indicating the existence of an exciton - exciton annihilation effect. The authors used a simple rate - equation model to explain this nonlinear behavior and estimate the exciton lifetime.

### Formula summary

- Differential equation for the change of exciton density with time:
\[
\frac{dn_x}{dt}=W_{\text{abs}}-\Gamma_x n_x-\gamma_{\text{eea}} n_x^2
\]
where \(W_{\text{abs}}\) is the exciton formation rate per unit area, \(\Gamma_x\) is the linear recombination rate, and \(\gamma_{\text{eea}}\) is the exciton - exciton annihilation rate.

- Steady - state exciton density:
\[
\langle n_x\rangle=\frac{\Gamma_x}{2\gamma_{\text{eea}}}\left(\sqrt{1 + \frac{4\gamma_{\text{eea}}W_{\text{abs}}}{\Gamma_x^2}}- 1\right)
\]

These studies are helpful for understanding the exciton dynamics in two - dimensional transition - metal chalcogenides and their potential application prospects, especially in the field of near - infrared optoelectronic devices.