Abstract:With a thin Ge nanolayer deposited on a prealloyed metallic stacked precursor, the formation of ZnSe is more favorable over Cu2Se due to larger negative Gibbs free energy for ZnSe when selenium reacts with Cu‐Zn alloy based on thermodynamic calculation. Cu from decomposed Cu‐Zn alloy exhibited a tendency to alloy with metal Sn, forming Cu‐Sn alloy and effecting subsequent kesterite formation pathway. Kesterite is an earth‐abundant energy material with high predicted power conversion efficiency, making it a sustainable and promising option for photovoltaics. However, a large open circuit voltage Voc deficit due to non‐radiative recombination at intrinsic defects remains a major hurdle, limiting device performance. Incorporating Ge into the kesterite structure emerges as an effective approach for enhancing performance by manipulating defects and morphology. Herein, how different amounts of Ge affect the kesterite growth pathways through the combination of advanced microscopy characterization techniques are systematically investigated. The results demonstrate the significance of incorporating Ge during the selenization process of the CZTSSe thin film. At high temperature, the Ge incorporation effectively delays the selenization process due to the formation of a ZnSe layer on top of the metal alloys through decomposition of the Cu‐Zn alloy and formation of Cu‐Sn alloy, subsequently forming of Cu‐Sn‐Se phase. Such an effect is compounded by more Ge incorporation that further postpones kesterite formation. Furthermore, introducing Ge mitigates detrimental "horizontal" grain boundaries by increasing the grain size on upper layer. The Ge incorporation strategy discussed in this study holds great promise for improving device performance and grain quality in CZTSSe and other polycrystalline chalcogenide solar cells.

Surface analysis of chalcogenide semiconductors used in photovoltaics (Conference Presentation)

Electronic properties of chalcogenide semiconductor nanostructures and thin-films

Atom-Scale Chemistry in Chalcopyrite-Based Photovoltaic Materials Visualized by Atom Probe Tomography.

Microstructural and Microchemical Analysis of Chalcopyrite Cu(In,Ga)Se 2 Films

Synthesis and Characterization of CIGS Powder

A microstructural study on the surface and interface of CdTe/CdS solar cells

Surface characterization of sprayed CuGa x In 1− x Se 2 layers

Tailored Band Structure of Cu(In,Ga)Se2 Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Charge-carrier-concentration inhomogeneities in alkali-treated Cu(In,Ga)Se2 revealed by conductive atomic force microscopy tomography

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Spatially resolved photoluminescence analysis of Se passivation and defect formation in CdSe$_{x}$Te$_{1-x}$ thin films

Surface characterization of sprayed CuGa x In1−x Se2 layers

In-depth analysis of CIGS film for solar cells, structural and optical characterization

Cesium Modulation in Cu(In, Ga)(S, Se) 2 Solar Cells: Comprehensive Analysis on Interface, Surface, and Grain Boundary

Analysis of efficiency limiting processes in thin film Cu(In,Ga)(S,Se)2 electrodeposited solar cells

Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study

Application of Advanced Microstructural and Microchemical Microscopy Techniques to Chalcopyrite Solar Cells.

From Atomic Structure to Photovoltaic Properties in CdTe Solar Cells

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Unveiling the Role of Ge in CZTSSe Solar Cells by Advanced Micro‐To‐Atom Scale Characterizations