Effects of Different Cs Distribution in the Film on the Performance of CIGS Thin Film Solar Cells
Shiqing Cheng,Kaizhi Zhang,Yunxiang Zhang,Zhichao He,Baolai Liang,Qian Du,Yun Sun,Wei Liu
DOI: https://doi.org/10.1016/j.solmat.2020.110917
IF: 6.9
2020-01-01
Solar Energy Materials and Solar Cells
Abstract:The post deposition treatment of CsF (CsF-PDT) plays an important role in improving the performance of CIGS solar cells. However, the doping mechanism of Cs-PDT is controversial. To further clarify it, the material properties of the CIGS thin film and photovoltaic characteristics of the devices with different amount of CsF doping are investigated in this paper. It can be demonstrated that the surface morphology, chemical properties and electrical structure of the absorber after CsF-PDT are similar to those of samples after KF-PDT and RbF-PDT. Especially, analogous wide band gap compound CsInSe2 is formed at the surface of the absorber, which can significantly reduce the interfacial recombination between the buffer layer and absorber. However, the measurement results indicate that the distribution and role of Cs in the absorber are somewhat different from those previously reported. Firstly, the entry of Cs does not promote the reduction of Na, but makes more Na enter the absorber. Secondly, the Cs atoms entering the film not only locate at the grain boundary but also enter the grains. Therefore, they can passivate the defects both at the grain boundary and grain interior, improving the hole carrier concentration and minority carrier lifetime. Finally, when excess Cs atoms enter the grain, the lattice constants and texture of the film transform significantly. In this case, the new defects (40 meV and 420 meV) will be generated in the film, which deteriorates the device performance.