Abstract:Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of Cu-based chalcogenides Cu$_2$-II-IV-VI$_4$ is studied. They are then screened with the aim of identifying potential absorber materials for photovoltaic applications. The spectroscopic limited maximum efficiency (SLME) introduced by Yu and Zunger is used as a metric for the screening. After constructing the current-voltage curve, the maximum spectroscopy dependent power conversion efficiency is calculated from the maximum power output. The role of the nature of the band gap, direct or indirect, and also of the absorptivity of the studied materials on the maximum theoretical power conversion efficiency is studied. Our results show that Cu$_2$-II-GeSe$_4$ with II=Cd and Hg, and Cu$_2$-II-SnS$_4$ with II=Cd and Zn have a higher theoretical efficiency compared to the materials currently used as absorber layer.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: through first - principles calculations, to study the optoelectronic properties of copper - based chalcogenides (Cu - based chalcogenides) and screen out compounds with potential high - efficiency light - absorbing layer materials. Specifically, the authors aim to: 1. **Study optoelectronic characteristics**: Use first - principles calculations based on density functional theory to study the optoelectronic characteristics of a series of Cu₂ - II - IV - VI₄ compounds. 2. **Screen high - efficiency light - absorbing materials**: By introducing the "spectral - limited maximum efficiency (SLME)" proposed by Yu and Zunger as an evaluation index, screen out high - efficiency light - absorbing materials that may be suitable for photovoltaic applications. 3. **Optimize material composition**: Explore how to optimize the optoelectronic properties of Cu₂ - II - IV - VI₄ compounds by changing the material composition. ### Main objectives - **Identify high - efficiency light - absorbing materials**: Identify new types of light - absorbing materials with higher theoretical efficiencies, especially those compounds that have not been fully explored in existing photovoltaic materials. - **Improve solar cell efficiency**: By studying the band - gap properties (direct or indirect), absorption rate and other characteristics of these materials, provide theoretical support for the development of high - efficiency thin - film solar cells. ### Methodology - **Calculation method**: Use the VASP code to perform first - principles calculations based on DFT, use the PAW potential to describe the electron - ion interaction, and use the HSE06 hybrid functional to calculate the electronic structure and optical properties. - **Evaluation index**: Use the SLME parameter to evaluate the spectral - dependent power conversion efficiency of the materials and compare it with the Shockley - Queisser (SQ) limit. ### Results and discussion - **Band - gap and absorption characteristics**: Research shows that as the atomic number of the VI element increases, the band - gap of the material decreases, the absorption edge has a red - shift, and the absorption coefficient increases. - **Efficiency evaluation**: By calculating the SLME at different thicknesses, it is found that some materials can still maintain high efficiency in the sub - micrometer thickness range, which provides the possibility of reducing the amount of materials used. - **New candidate materials**: Finally, four compounds, Cu₂CdGeSe₄, Cu₂CdSnS₄, Cu₂HgGeS₄ and Cu₂ZnSnS₄, are determined as possible high - efficiency light - absorbing layer materials, and their theoretical efficiencies are higher than 25%. ### Conclusion This study shows that the optoelectronic properties of copper - based chalcogenides are closely related to their components, especially the change of the VI element has a significant impact on the material characteristics. The research results not only provide a theoretical basis for the development of new high - efficiency photovoltaic materials, but also point out the potential of Cu₂II - GeSe₄ (II = Cd, Hg) and Cu₂ - II - SnS₄ (II = Cd, Zn) as high - efficiency light - absorbing layers.

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