Abstract:Due to the unique anisotropic chemical and physical properties, two-dimensional (2D) layered materials, such as IV-VI monochalcogenides with puckered honeycomb structure, have received considerable interest recently. Among the IV-VI layered MX (M = Ge, Sn; X = Se, S) compounds, germanium sulfide (GeS) stands out for its strongest anisotropic thermal conductivities and figure-of-merit values. Additionally, the layer-independent direct energy bands (Eg ∼1.6 eV, E1 ∼2.1 eV) of GeS flake provide excellent insights into further applications as visible photodetectors. Herein, the polarization-tunable nonlinear absorption (NA) patterns of GeS flake have been systematically investigated. Specifically, both the polarization-dependent Raman spectroscopy and the linear absorption (LA) spectroscopy were employed to characterize the lattice orientation and absorption edges of the 251-nm GeS flake. Considering the low damage threshold of GeS flake, the GeS/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of GeS. Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption (SA) effect along armchair and reverse-saturated-absorption (RSA) effect along zigzag in the GeS/graphene heterostructure. Moreover, the function of the polarization-based GeS/graphene heterostructure all-optical switch was experimentally verified. Notably, thanks to the polarization-dependent NA patterns (SA/RSA) of GeS, the "ON" and "OFF" states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser (532 nm, 80 nW), whose state can be controlled by the polarization of femtosecond switching laser (600 nm, 35 fs, 500 Hz, 12 GW cm−2). The ON/OFF ratio can achieve up to 17% by changing polarization, compared with the ratios of 3.0% by increasing the incident power of switching light in our experiment. The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devices based on GeS/graphene heterostructure.

Excellent nonlinear absorption properties of 2D germanium nanosheets in the infrared band

Thickness-dependent ultrafast nonlinear optical response of germanium selenide nanosheets

Freestanding Germanene Nanosheets for Rapid Degradation and Photothermal Conversion

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

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Near-field effect in the infrared range through periodic Germanium subwavelength arrays.

Nonlinear optical response of polycrystalline GeSe films

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Large nonlinear optical absorption and refraction of β-In 2 Se 3 thin film from above to below bandgap excitation

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Broadband Nonlinear Optical Response in GeSe Nanoplates and Its Applications in All-Optical Diode

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2D tungsten nanosheets: ascendant nonlinear absorption properties in the ultraviolet band

A Detailed Study on the Electronic and Optical Properties of Germanium Nanotubes

Gallium-doped Zinc Oxide: Nonlinear Reflection and Transmission Measurements and Modeling in the ENZ Region

2D GeP as a Novel Broadband Nonlinear Optical Material for Ultrafast Photonics

A Universal Growth Method for High Quality Phase-Engineered Germanium Chalcogenide Nanosheets

Giant Enhancement of Continuous Wave Second Harmonic Generation from Few-Layer GaSe Coupled to High- Q Quasi Bound States in the Continuum

Investigation of Optical Nonlinear Properties in Semiconductor Gan

Nanostructured germanium with >99 % absorption at 300-1600 nm wavelengths