Abstract:The degradation of electrical parameters for SiC power metal–oxide–semiconductor field-effect transistors (MOSFETs) under repetitive switching stress is investigated in detail. The dominant degradation mechanism is demonstrated to be the injection of negative charges into the gate oxide interface along the channel. It results in the increase in threshold voltage ( $V_{mathrm {th}}$ ) and the increase in ON-state resistance ( $R_{mathrm {dson}}$ ) under low gate bias condition. Furthermore, the influences of different stages during an entire switching process on the degradation trend of the device are verified. It is found that the charges are mainly injected into the gate oxide during the conduction stage. Even though the turn-on stage rarely results in the injection directly, it increases the junction temperature ( $T_{j}$ ), contributing to the injection of charges during the conduction stage. However, the turn-off stage barely degrades the performance of the device. The research also proves the robustness of SiC power MOSFETs under repetitive out-of-safe operating area (SOA) switching conditions. Moreover, the degradation of switching behaviors of the device is analyzed. The increased $V_{mathrm {th}}$ increases the Miller plateau voltage ( $V_{mathrm {gp}}$ ), leading to the increase in turn-on time and the decrease in turn-off time. Hence, the turn-on dissipated energy ( $E_{mathrm {on}}$ ) increases, while the turn-off dissipated energy ( $E_{mathrm {off-}$ ) decreases after enduring the stress.

Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review

Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review

Review and analysis of SiC MOSFETs’ ruggedness and reliability

A Brief Overview of SiC MOSFET Failure Modes and Design Reliability

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures

Failure Mechanism Analysis of 1.2 kV SiC MOSFETs Under Low-Temperature Storage, Power Cycling, and Short-Circuit Interactions

A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs

Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress

Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Optimization Of The Cell Structure For Radiation-Hardened Power Mosfets

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs

A Brief Review of Single Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide MOSFETs

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Competitive Failures Decoupling and Mechanisms Analysis of SiC MOSFET Module Under Power Cycling Stress

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress