Abstract:Valleytronics, that uses the valley index or valley pseudospin to encode information, has emerged as an interesting field of research in two-dimensional (2D) systems with promising device applications. Spin-orbit coupling (SOC) and inversion symmetry breaking leads to spin-splitting of bands near the energy extrema (valleys). In order to find a new 2D material useful for valleytronics, we have designed hexagonal planar monolayers of cadmium chalcogenides (CdX, X = S, Se, Te) from the (111) surface of bulk CdX zinc blende structure. Band structure study reveals valence band local maxima at symmetry point K and its time reversal conjugate point K$\textquotesingle$. Application of SOC initiates spin-splitting in the valleys that lifts the energy degeneracy and shows strong valley-spin coupling character. We have substituted two Cd atoms in the planar monolayers by Sn atoms which increases the spin-splitting significantly. The structural, dynamic, mechanical and thermal stability of all the monolayers has been confirmed. Values of formation energies indicate that it may be feasible to synthesize the Sn-doped CdSe and CdTe monolayers using bottom-up approach. Zeeman-type spin-splitting is observed in the valley region and Rashba spin-splitting is observed at the $\Gamma$ point for Sn-doped CdSe and CdTe monolayers. Berry curvature values are more in all the Sn-doped monolayers than the pristine monolayers. These newly designed monolayers are thus found to be suitable for valleytronics applications. Sn-doped monolayers show band inversion deep in the valence and conduction bands between Sn~$s$ and $p$ and X~$p$ states but lack topological properties.

Valley-selective carrier transfer in SnS-based van der Waals heterostructures

Design of Sn-doped cadmium chalcogenide based monolayers for valleytronics properties

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Symmetry-Driven Valleytronics in Single-Layer Tin Chalcogenides

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Concepts of ferrovalley material and anomalous valley Hall effect

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Nonvolatile Electrical Switching of Optical and Valleytronic Properties of Interlayer Excitons

Opto-valleytronic imaging of atomically thin semiconductors

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Symmetry-driven valleytronics in the single-layer tin chalcogenides SnS and SnSe

Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection

Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

Valley Contrasting in Epitaxial Growth of In/Tl Homoatomic Monolayer with Anomalous Nernst Conductance

Valleytronics. The valley Hall effect in MoS₂ transistors

Valley-selective optical Stark effect in monolayer WS2

Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit

Van der Waals heterostructure Pt 2 HgSe 3 / CrI 3 for topological valleytronics