Abstract:The detector material Cadmium Zinc Telluride (CZT) achieves excellent spatial resolution and good energy resolution over a broad energy range, several keV up to some MeV. Presently, there are two main methods to grow CZT crystals, the Modified High-Pressure Bridgman (MHB) and the High-Pressure Bridgman (HPB) process. The study presented in this paper is based on MHB CZT substrates from the company Orbotech Medical Solutions Ltd. [Orbotech Medical Solutions Ltd., 10 Plaut St., Park Rabin, P.O. Box 2489, Rehovot, Israel, 76124]. Former studies have shown that high-work-function materials on the cathode side reduce the leakage current and, therefore, improve the energy resolution at lower energies. None of the studies have emphasized on the anode contact material. Therefore, we present in this paper the result of a detailed study in which for the first time the cathode material was kept constant and the anode material was varied. We used four different anode materials: Indium, Titanium, Chromium and Gold, metals with work-functions between 4.1eV and 5.1eV. The detector size was 2.0×2.0×0.5cm3 with 8×8 pixels and a pitch of 2.46mm. The best performance was achieved with the low-work-function materials Indium and Titanium with energy resolutions of 2.0keV (at 59keV) and 1.9keV (at 122keV) for Titanium and 2.1keV (at 59keV) and 2.9keV (at 122keV) for Indium. Taking into account the large pixel pitch of 2.46mm, these resolutions are very competitive in comparison to those achieved with detectors made of material produced with the more expensive conventional HPB method. We present a detailed comparison of our detector response with 3D simulations. The latter comparisons allow us to determine the mobility-lifetime-products (μτ-products) for electrons and holes. Finally, we evaluated the temperature dependency of the detector performance and μτ-products. For many applications temperature dependence is important, therefore, we extended the scope of our study to temperatures as low as −30°C. There are two important results. The breakdown voltage increases with decreasing temperature, and electron mobility-lifetime-product decreases by about 30% over a range from 20°C to −30°C. The latter effect causes the energy resolution to deteriorate, but the concomitantly increasing breakdown voltage makes it possible to increase the applied bias voltage and restore the full performance.

New investigations of the porous dielectric detectors

Method for direct observation of coherent quantum oscillations in a superconducting phase qubit. Computer simulations

Study of Counting Characteristics of Porous Radiation Detectors

Phase evolution and fluorescence stability of CsPb2Br5 microwires and its application to stable and sensitive photodetectors

Ion Migration Controlled Stability in Α-Particle Response of CsPbBr2.4Cl0.6 Detectors

High energy resolution CsPbBr3 alpha particle detector with a full-customized readout application specific integrated circuit

Detailed studies of pixelated CZT detectors grown with the modified horizontal Bridgman method

Development and preliminary tests of resistive microdot and microstrip detectors

Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles

Electrical and Spectroscopic Properties of SiC Detectors

Development of a new generation of micropattern gaseous detectors for high energy physics, astrophysics and environmental applications

Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation

Development of A New Approach to Simulate A Particle Track under Electrochemical Etching in Polymeric Detectors

Investigation of the Thickness Non-Uniformity of the Very Thin Silicon-Strip Detectors

Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Fast and Wide-Band Response Infrared Detector Using Porous PZT Pyroelectric Thick Film

A New GEM-like Imaging Detector with Electrodes Coated with Resistive Layers

Dynamics of direct X-ray detection processes in high-Z Bi 2 O 3 nanoparticles-loaded PFO polymer-based diodes

A CsI low temperature detector for dark matter search

Elimination of dead layer in silicon particle detectors via induced electric field based charge collection