Abstract:Nonlinear silicon photonics has been an immense research subject in the past several years with promising prospects of delivering chip scale signal modulation, shaping and characterization tools. In particular, broadband parametric process has been considered for applications ranging from wideband light amplifiers to signal characterization and signal shaping tools. Although underlying nonlinear effect, Kerr phenomena, in silicon has generated promising result of wavelength conversion, the success of these devices have been challenged by the presence of nonlinear losses such as two photon absorption and the two photon generated free carrier absorption. Experimental demonstrations were limited to conversion efficiencies below -10dB. Here, we present the prospect of ultra wide discrete band conversion schemes and the prospect of parametric process at mid-infrared wavelengths where nonlinear losses are not present. In particular, we explore the parametric wavelength conversion scheme at mid-wave infrared wavelength (2 mu m similar to 6 mu m) by four-wave-fixing process in silicon waveguides with new cladding materials, such as sapphire, that can provide transparency up to 6 mu m and facilitate phase matching condition for discrete wavelength bands as far as 60THz away from each other. Design criteria include the optimization of mode overlap integrals and dispersion engineering for an ultra-wide band signals. The particular results of wavelength conversion between 2 mu m bands and 5 mu m bands, and between 1.8 mu m bands and >4 mu m bands will be presented. Prospects of frequency band conversion in generation of new infrared signals and low noise, room temperature detection of mid-infrared signals will also be discussed.

Performance evaluation of on-chip wavelength conversion based on InP/In$_{1-x}$Ga$_x$As$_y$P$_{1-y}$ semiconductor waveguide platforms

Dispersion-engineered InGaAsP/InP waveguide for high efficiency all-optical on-chip wavelength conversion

Power-Attenuated Optimization for Four-Wave Mixing-Based Wavelength Conversion in Silicon Nanowire Waveguides

Optimal Design of a Silicon-on-insulator Nanowire Waveguide for Broadband Wavelength Conversion

Enhancement of Nonlinear Phase Shift for Format Conversion in Silicon Waveguides

Design of Mid-Infrared Nonlinear Silicon–germanium Waveguides for Broadband/discrete-Band Wavelength Conversion

Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion

Integrated Wavelength Conversion for Adaptively Modulated WDM-OFDM Signals in a Silicon Waveguide

Quasi Phase Matching in Soi and Sos Based Parametric Wavelength Converters

Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier

Wavelength-Assignable 1310/1550 Nm Wavelength Conversion Using Completely Phase-Matched Two-Pump Four-Wave Mixing in A Silicon Waveguide

Experiment of C-Band Wavelength Conversion in a Silicon Waveguide Pumped by Dispersed Femtosecond Laser Pulse

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Over 100nm Wavelength Conversion Bandwidth with High Efficiency on AlGaAsOI Nonlinear Waveguides

Performance Evaluation of Nondegenerate Wavelength Conversion in a Silicon Nanowire Waveguide

All-optical Wavelength Conversion for Telecommunication Mode-Division Multiplexing Signals in Integrated Silicon Waveguides.

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Design of Silicon Photonic Wavelength Conversion Chip for Mode-division Multiplexing Signals

Optical Performance Of Single-Mode Hybrid Dielectric-Loaded Plasmonic Waveguide-Based Components

Bandwidth enhancement and response flattening of cascaded sum- and difference-frequency generation-based wavelength conversion

Silicon-based Ultra-Wide Discrete Band Conversion