Abstract:Atomic Layer Deposition (ALD) is an advanced technology that creates diverse defects and interfaces in thermoelectric materials at multiple scales. By precisely controlling these defects and interfaces, ALD significantly enhances the performance of thermoelectric materials, making it a promising method for improving energy conversion technologies. Enhancing the performance of thermoelectric materials remains critical for practical applications. Increasing the power factor and reducing the thermal conductivity are key strategies for improving the thermoelectric performance. Doping, incorporating secondary phases, and generating dislocations can be used to introduce defects and grain boundaries to improve the thermoelectric performance. The application of an ultrathin film as a coating on thermoelectric materials via atomic layer deposition (ALD) has recently attracted attention as a novel approach to enhance the performance. The excellent conformality of ALD enables the conformal deposition of ultrathin films on powder to enable the interfacial properties to be meticulously controlled even after sintering. Using ALD to deposit an ultrathin layer on the thermoelectric powder matrix induces various defects through the interactions of the coating material with the thermoelectric matrix, which provide exquisite control over the material properties. This review discusses the phenomena induced by applying ultrathin coatings to thermoelectric materials through ALD, elucidates the underlying mechanisms, and examines the effects on the thermoelectric performance. Based on these insights, innovative pathways for applying ALD to thermoelectric materials are proposed, and robust strategies for enhancing these properties through the precise modulation of diverse defects and interfaces are discussed.

Recent advances in atomic layer deposition-based interface modification engineering in thermoelectric materials

Effective Atomic Interface Engineering in Bi2Te2.7Se0.3 Thermoelectric Material by Atomic-Layer-deposition Approach

Improving the Performance of Thermoelectric Materials by Atomic Layer Deposition-based Grain Boundary Engineering

Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance

Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition

Effect of Powder ALD Interface Modification on the Thermoelectric Performance of Bismuth

Imprints of interfaces in thermoelectric materials

Zr vacancy interface: an effective strategy for collaborative optimization of ZrNiSn-based thermoelectric performance

Current State‐of‐the‐Art in the Interface/Surface Modification of Thermoelectric Materials

Construct Amorphous Polymer Interface to Enhance the Thermoelectric Performance of Commercial Bi0.5Sb1.5Te3 Materials

Enhanced Thermoelectric Performance of SnTe-Based Materials via Interface Engineering

Designing Cost-Performance Porous Thermoelectric Materials by Interface Engineering Through Atomic Layer Deposition

Interstitials in Thermoelectrics

High-performance Nanostructured Thermoelectric Materials

Approaching crystal's limit of thermoelectrics by nano-sintering-aid at grain boundaries

Highly Distorted Grain Boundary with an Enhanced Carrier/Phonon Segregation Effect Facilitates High-Performance Thermoelectric Materials

Precision grain boundary engineering in commercial Bi 2 Te 2.7 Se 0.3 thermoelectric materials towards high performance

Enhancing the Thermoelectric Property of Bi2Te3 Through a Facile Design of Interfacial Phonon Scattering

Precision Grain Boundary Engineering in Commercial Bi2Te2.7Se0.3 Thermoelectric Materials Towards High Performance

Interfacial Distortion of Sb 2 Te 3 -Sb 2 Se 3 Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions.