Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors
Yu-Chuan Lin,Bhakti Jariwala,Brian M. Bersch,Ke Xu,Yifan Nie,Baoming Wang,Sarah M. Eichfeld,Xiaotian Zhang,Tanushree H. Choudhury,Yi Pan,Rafik Addou,Christopher M. Smyth,Jun Li,Kehao Zhang,M. Arran Haque,Stefan Folsch,Randall M. Feenstra,Robert M. Wallace,Kyeongjae Cho,Susan K. Fullerton-Shirey,Joan M. Redwing,Joshua A. Robinson
DOI: https://doi.org/10.1021/acsnano.7b07059
IF: 17.1
2018-01-01
ACS Nano
Abstract:Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 μA·μm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.