MoS2 synaptic transistor with one-step manufacture

Yihao Guo,Yang Wang,Wenjie Deng,Yi Wu,Jingtao Li,Kexin Li,Yuehui Zhao,Songlin Yu,Xiaoting Wang,Yongzhe Zhang,Hui Yan

DOI: https://doi.org/10.1007/s11432-024-4093-1

2024-12-18

Science China Information Sciences

Abstract:The synaptic transistor, which is a neuromorphic device with brain-like functions, has garnered significant attention due to characteristics such as low energy consumption, high integration, multiple functions, and high computational efficiency. However, the current synaptic transistor possesses a complicated structure and involves complex manufacturing steps, which is not conducive to low-cost, large-scale bionic integration. Herein, we introduce a simple MoS 2 synaptic transistor exhibiting robust synaptic plasticity. This transistor utilizes magnetron sputtering manufacture to combine the process of device metal electrode deposition and the introduction of defect states, which helps streamline the manufacturing process into a single step. The long-term potentiation and long-term depression in photoelectric coordination are initially revealed. Subsequently, biological functions, such as double pulse facilitation and the transformation behavior of short-term memory to long-term memory, are thoroughly evaluated, along with learning-forgetting-relearning processes. Interestingly, the device exhibits robust synaptic plasticity until incident light angles down to 30° to imitate the multi-to-one axon-cellular synapses. Finally, a classical simulation of Pavlov's dog conditioned reflex is demonstrated along with the multiview extraction applications. The experimental results demonstrate a promising synaptic transistor with a simple structure, manufacturing technique, and excellent performance. This further indicates the potential for large-scale integration of bionic neuromorphic systems.

computer science, information systems,engineering, electrical & electronic