Abstract:Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene1,2,3,4,5,6,7,8,9,10,11,12. Although suspending the graphene above the substrate leads to a substantial improvement in device quality13,14, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved with a suspended sample. Hexagonal boron nitride (h-BN) is an appealing substrate, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps. It also has a lattice constant similar to that of graphite, and has large optical phonon modes and a large electrical bandgap. Here we report the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal h-BN substrates, by using a mechanical transfer process. Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO2. These devices also show reduced roughness, intrinsic doping and chemical reactivity. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics15 and allows for the realization of more complex graphene heterostructures. Graphene devices supported on single-crystal hexagonal boron nitride substrates show an enhanced mobility and carrier homogeneity, as well as reduced roughness, intrinsic doping and chemical reactivity, compared with traditional SiO2 substrates.

Flow Modulation Epitaxy of Thick Boron Nitride Epilayers and Wafer-Level Exfoliation

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Wafer Level Quasi-Van Der Waals Epitaxy of AlGaN/GaN Heterojunctions on Sp2-Bonded BN Controlled by AlN Nucleation Layer

Growth Mechanism of Exfoliable GaN by Van Der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

Millimeter-scale exfoliation of hBN with tunable flake thickness

Millimeter-Scale Exfoliation of Hbn with Tunable Flake Thickness for Scalable Encapsulation

Comprehensive characterization and analysis of hexagonal boron nitride on sapphire

Liquid Metal-Assisted High-Efficiency Exfoliation of Boron Nitride for Electrically Insulating Heat-Spreader Film

Mechanical Peeling Characteristics of Large-Scale High-Crystallinity Hbn Films

High-Crystallinity and High-Temperature Stability of the Hexagonal Boron Nitride Film Grown on Sapphire

Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN

Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy

Effect of Flow Rate and Precursor Sublimation Temperature on the LPCVD Growth of Hexagonal Boron Nitride

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Boron Nitride Substrates for High-Quality Graphene Electronics.

Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal

Large wafer-level two-dimensional h-BN with unintentional carbon doping grown by metalorganic chemical vapor deposition

Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics