Deposition of alternative plasmonic ZrHfN thin films via closed-field dual-cathode DC unbalanced magnetron sputtering for enhanced SEF substrate applications

T. Chaikeeree,N. Kasayapanand,N. Mungkung,W. Phae-ngam,T. Lertvanithphol,K. Dhanasiwawong,H. Nakajima,G. Gitgeatpong,J. Prathumsit,D. Chittinan,S. Arunrungrusmi,N. Triamnak,M. Horprathum
DOI: https://doi.org/10.1016/j.optmat.2024.115166
IF: 3.754
2024-03-18
Optical Materials
Abstract:We present the preparation of zirconium hafnium nitride thin films as an alternative plasmonic sensing material. The ZrHfN thin films were deposited by closed-field dual-cathode DC unbalanced magnetron sputtering without an external substrate heating/biasing. A comprehensive investigation into the effect of zirconium sputtering current on the physical structural, and chemical compositions was systematically characterized by grazing-incidence X-ray diffraction, transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and X-ray absorption spectroscopy. Our results indicate that the optimal ZrHfN thin films deposited at 500 mA-I Zr exhibit good crystallinity and high surface roughness, which presents excellent surface-enhanced fluorescent substrate performance for detecting rhodamine 6G at a limit of detection of 5.99 × 10 −8 M, an enhancement factor of 15.62 ± 0.79-fold and displaying reusability through 25 cycles. These findings suggest promising prospects for developing ZrHfN-based SEF sensor chips for diverse applications in the future.
materials science, multidisciplinary,optics
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