Enhancing the performance of UV photodetection using bismuth oxide nanosheets synthesized by laser ablation method
Abdullah Marzouq Alharbi,Naser M. Ahmed,Azhar Abdul Rahman,Nurul Zahirah Noor Azman,Munirah A. Almessiere,Naif H. Al-Hardan
DOI: https://doi.org/10.1007/s10854-024-11948-3
2024-01-23
Journal of Materials Science Materials in Electronics
Abstract:This study investigates the effect of bismuth oxide nanosheets (Bi 2 O 3 -Nsh) on the performance of ZnO/Si UV photodetection. The nanosheets were synthesized using a laser ablation in liquid (LAL) method. The crystalline structures, morphologies, and optical attributes of the prepared three devices (ZnO/Si, Bi 2 O 3 -Nsh/Si, and Bi 2 O 3 -Nsh/ZnO/Si) were determined. The UV photodetection performance of the samples was evaluated by exposing them to 385 nm UV light at varying bias voltages. The Bi 2 O 3 -Nsh/ZnO/Si-based UV photodetectors showed a strong response to the UV light, and the I-V curve changed dramatically from 59 μA to 7 mA at 5 V voltage. In addition, Bi 2 O 3 -Nsh/ZnO/Si-based UV photodetectors under light have superior photo-response compared to the Bi 2 O 3 -Nsh/Si and ZnO/Si with the highest responsivity of 30.3 A/W, quantum efficiency of 98.58, the sensitivity of 17,200%, gain of 173, detectivity of 6.38 × 10 10 Jones, and NEP 0.157 × 10 –12 W under illumination of 385 nm UV light at a bias voltage of 6 V. The research findings highlight the effectiveness of Bi 2 O 3 -Nsh in enhancing the performance of ZnO/Si systems and offer insights into the potential applications of the liquid's laser ablation method in Bi 2 O 3 nanosheet synthesis.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied