Abstract:Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heterostructure material systems have received widespread attention among the community of materials science and condensed matter physics3-11. Such ferroelectric polarization emergent at the vdW interface can coexist with other quantum states and thus provides an unprecedented opportunity to electrically switch the topological edge states of interest, which is of crucial significance to the fault-tolerant electronic device applications based on the topological edge states. Here, we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices and demonstrate its promising application in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN layers, and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. This ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By using a VBG pulse with delicately controlled amplitude, we realize the nonvolatile switching between any pair of Chern insulating states and achieve 1280 distinguishable nonvolatile resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of nonvolatile resistance levels.

Building programmable integrated circuits through disordered Chern insulators

Engineering high Chern number insulators

Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide

Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing

Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing

Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors

Critical nonlinear aspects of hopping transport for reconfigurable logic in disordered dopant networks

Ferroelectric Domain-Wall Logic Units

Circuit implementation of a four-dimensional topological insulator

Chiral interface states and related quantized transport in disordered Chern insulators

Anomalous nonreciprocal topological networks: stronger than Chern insulators

Simulating Chern insulators on a superconducting quantum processor

Electrically programmable magnetic coupling in an Ising network exploiting solid-state ionic gating

Logic Gates and Computation from Assembled Nanowire Building Blocks

Programmable graded doping for reconfigurable molybdenum ditelluride devices

Reconfigurable electronics by disassembling and reassembling van der Waals heterostructures

Current-driven Magnetic Domain-Wall Logic

Low-energy complementary ferroelectric-nanocrack logic

Complementary Logic with Voltage Zero‐Loss and Nano‐Watt Power Via Configurable MoS2/WSe2 Gate

Towards fully electrically controlled domain-wall logic