Abstract:Abstract The classification of topological insulators predicts the existence of high-dimensional topological phases that cannot occur in real materials, as these are limited to three or fewer spatial dimensions. We use electric circuits to experimentally implement a four-dimensional (4D) topological lattice. The lattice dimensionality is established by circuit connections, and not by mapping to a lower-dimensional system. On the lattice’s three-dimensional surface, we observe topological surface states that are associated with a nonzero second Chern number but vanishing first Chern numbers. The 4D lattice belongs to symmetry class AI, which refers to time-reversal-invariant and spinless systems with no special spatial symmetry. Class AI is topologically trivial in one to three spatial dimensions, so 4D is the lowest possible dimension for achieving a topological insulator in this class. This work paves the way to the use of electric circuits for exploring high-dimensional topological models.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to realize and study the 4D topological insulator through electrical circuit experiments. Specifically, the authors use electrical circuits to construct a 4D topological lattice and observe topological surface states associated with non - zero second Chern numbers on the three - dimensional surface of this lattice, while the first Chern numbers are zero. ### Main problems and goals 1. **Realize high - dimensional topological phases**: - Traditional materials are limited to three - dimensional space and cannot realize topological phases of higher dimensions. This research realizes a 4D topological insulator through electrical circuits, which is impossible in actual materials. 2. **Verify theoretical models**: - Based on class AI in symmetry classification (time - reversal - invariant and spinless systems with no special spatial symmetry), the researchers realize the first 4D Quantum Hall phase. Such systems are topologically trivial in three - dimensional and lower - dimensional spaces, so 4D is the minimum possible dimension to realize a topological insulator. 3. **Observe topological surface states**: - Topological surface states protected by the 4D band topological characteristics are observed on the three - dimensional surface. These states are not related to topological invariants of lower dimensions but are only associated with the non - trivial characteristics of the 4D band structure. ### Experimental methods - **Circuit design**: Through carefully designed connections of capacitors and inductors, a 4D lattice model with four sub - lattices (A, B, C, D) is constructed. The hopping and mass terms between each sub - lattice are mapped to capacitor and inductor elements in the circuit. - **Measurement method**: Using impedance measurements (equivalent to finding the local density of states, LDOS), the distributions of surface states and bulk states under different parameters are studied. ### Experimental results - **Topological phase transition**: When the mass parameter \( m \) changes within a specific range, the system transforms from the 4D Quantum Hall phase (4DQH phase) to the conventional insulator phase. In the 4DQH phase, an enhanced surface - state response is observed, while there is no obvious surface state in the conventional insulator phase. - **Frequency dependence**: The impedance measurement results show that at small \( m \) values, the surface states show a significant enhancement within the frequency range of the bulk bandgap. As \( m \) increases, the bandgap closes and the surface states disappear. ### Conclusions This research realizes a 4D topological insulator through electrical circuits for the first time and observes surface states protected by the 4D band topological characteristics on the three - dimensional surface. This provides a new experimental platform for exploring higher - dimensional topological models and shows the potential of electrical circuits in realizing complex topological phases. ### Formula presentation - Second Chern Number: \( C_2 \) - First Chern Number: \( C_1 = 0 \) - Impedance measurement formula: \[ Z_r = i\alpha\lim_{\epsilon \to 0}\sum_n\frac{|\psi_n(r)|^2}{E - E_n + i\epsilon} \] where \( \psi_n(r) \) is the amplitude of the \( n \) - th energy eigenstate at position \( r \), and \( E_n \) is the corresponding eigenenergy. Through the above methods, this research not only verifies the existence of 4D topological insulators but also lays the foundation for further exploration of other high - dimensional topological phases.

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