Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

Low-energy complementary ferroelectric-nanocrack logic

Nonvolatile Ferroelectric Field-Effect Transistors.

Reversible nanocracks-induced resistive switching manipulated by ferroelectric polarizing in Te/PMN-PT heterostructures

Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

Ferroelectric Domain-Wall Logic Units

Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing

A Ferroelectric Domain-Wall Transistor

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

Nonvolatile Logic Inverters Based on 2D CuInP2S6 Ferroelectric Field Effect Transistors

Ferroelectric‐Switchable Single Photodetector Implementing Complex Optoelectronic Logics

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing

Electric field control of domain wall logic in piezoelec-tric/ferromagnetic nanodevices

Ultra-Low-Energy Straintronics Using Multiferroic Composites

Ultra-low-energy non-volatile straintronic computing using single multiferroic composites

Single‐gate in‐transistor readout of current superposition and collapse utilizing quantum tunneling and ferroelectric switching

Electrically Controlled Non-Volatile Switching of Magnetism in Multiferroic Heterostructures Via Engineered Ferroelastic Domain States

Diode-Like Behavior Based on Conductive Domain Wall in LiNbO Ferroelectric Single-Crystal Thin Film

The Flexible Aluminum-doped Hafnium Oxide ferroelectric synapse devices for neuromorphic computing

In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces