Correlation of Atomic Structure and Luminescence of Two-dimensional MoSe2/WSe2 In-plane Nanodot Heterostructures

S. Woo,N. Alem,B. Huet,N. Trainor,J. Redwing,M. Kociak,L. Tizei,S. Bachu,D. R. Hickey
DOI: https://doi.org/10.1017/S1431927622007632
IF: 4.0991
2022-07-22
Microscopy and Microanalysis
Abstract:Spatially confined material systems such as nanowires, quantum wells and thin film superlattices are widely studied for their unique light emission properties, making them attractive candidates for emerging optoelectronic applications such as photodetectors, light emitting diodes, lasers, etc. [1]. Two-dimensional (2D) transitional metal dichalcogenides (TMDs) are an excellent choice to add to the growing list of spatially confined material systems because, in the form of monolayers, they become direct band gap semiconductors displaying high binding energy excitons, which makes them excellent light emitters [2]. These materials can be further engineered to get localized light emission by means of point defects, folds, and Moiré superlattice formation by preparing vertical heterostructures [3]. A novel method to possibly achieve localized emission from TMDs is to form in-plane monolayer TMD heterostructures wherein one of the phases is spatially confined resulting in nanodot/matrix type interfaces.
Materials Science,Physics
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