Tunable spin–orbit physics in van der Waals heterostructures

Mikhail I. Katsnelson

DOI: https://doi.org/10.1038/s41563-024-02018-4

IF: 41.2

2024-10-09

Nature Materials

Abstract:Twist-angle control of spin–charge interconversion in a graphene/WSe2 heterostructure is demonstrated.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter

What problem does this paper attempt to address?

Twist-angle-tunable spin texture in WSe 2 /graphene van der Waals heterostructures

Haozhe Yang,Beatriz Martín-García,Jozef Kimák,Eva Schmoranzerová,Eoin Dolan,Zhendong Chi,Marco Gobbi,Petr Němec,Luis E. Hueso,Fèlix Casanova

DOI: https://doi.org/10.1038/s41563-024-01985-y

IF: 41.2

2024-08-28

Nature Materials

Abstract:Twist engineering has emerged as a powerful approach for modulating electronic properties in van der Waals heterostructures. While theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, experimental studies are lacking. Here, by performing spin precession experiments, we demonstrate tunability of the spin texture and associated spin–charge interconversion with twist angle in WSe 2 /graphene heterostructures. For specific twist angles, we detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by twist angle, highlighting the critical role of the twist angle in the spin–orbit properties of WSe 2 /graphene heterostructures and paving the way for the development of spin-twistronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Twist-angle tunable spin texture in WSe$_2$/graphene van der Waals heterostructures

Haozhe Yang,Beatriz Martín-García,Jozef Kimák,Eva Schmoranzerová,Eoin Dolan,Zhendong Chi,Marco Gobbi,Petr Němec,Luis E. Hueso,Fèlix Casanova

2023-12-16

Abstract:Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion with twist angle in WSe$_2$/graphene heterostructures by using spin precession experiments. For specific twist angles, we experimentally detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by angle twisting, highlighting its critical role on the spin-orbit properties of WSe$_2$/graphene heterostructures and paving the way for the development of novel spin-twistronic devices.

Mesoscale and Nanoscale Physics
AControl of Charge‐Spin Interconversion in Van Der Waals Heterostructures with Chiral Charge Density Waves

Zhendong Chi,Seungjun Lee,Haozhe Yang,Eoin Dolan,C. K. Safeer,Josep Ingla‐Aynés,Franz Herling,Nerea Ontoso,Beatriz Martín‐García,Marco Gobbi,Tony Low,Luis E. Hueso,Fèlix Casanova

DOI: https://doi.org/10.1002/adma.202310768

IF: 29.4

2024-01-20

Advanced Materials

Abstract:A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low‐dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its practical application remains limited. Here, we show an unprecedented demonstration of a tunable charge‐spin interconversion (CSI) in graphene/1T‐TaS2 van der Waals heterostructures by manipulating the distinct CDW phases in 1T‐TaS2. Whereas CSI from spins polarized in all three directions are observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first‐principles calculations, which evidence that chiral CDW multidomains in the heterostructure are at the origin of the switching of CSI. Our results uncover a new approach for on‐demand CSI in low‐dimensional systems, paving the way for advanced spin‐orbitronic devices. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer

Cyrine Ernandes,Lama Khalil,Hugo Henck,Meng-Qiang Zhao,Julien Chaste,Fabrice Oehler,Alan T Charlie Johnson,Maria C Asensio,Debora Pierucci,Marco Pala,José Avila,Abdelkarim Ouerghi,Alan T. Charlie Johnson,Maria C. Asensio

DOI: https://doi.org/10.3390/nano11112921

IF: 5.3

2021-10-31

Nanomaterials

Abstract:The strain in hybrid van der Waals heterostructures, made of two distinct two-dimensional van der Waals materials, offers an interesting handle on their corresponding electronic band structure. Such strain can be engineered by changing the relative crystallographic orientation between the constitutive monolayers, notably, the angular misorientation, also known as the “twist angle”. By combining angle-resolved photoemission spectroscopy with density functional theory calculations, we investigate here the band structure of the WS2/graphene heterobilayer for various twist angles. Despite the relatively weak coupling between WS2 and graphene, we demonstrate that the resulting strain quantitatively affects many electronic features of the WS2 monolayers, including the spin-orbit coupling strength. In particular, we show that the WS2 spin-orbit splitting of the valence band maximum at K can be tuned from 430 to 460 meV. Our findings open perspectives in controlling the band dispersion of van der Waals materials.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves

Zhendong Chi,Seungjun Lee,Haozhe Yang,Eoin Dolan,C. K. Safeer,Josep Ingla-Aynés,Franz Herling,Nerea Ontoso,Beatriz Martín-García,Marco Gobbi,Tony Low,Luis E. Hueso,Fèlix Casanova

DOI: https://doi.org/10.1002/adma.202310768

2024-06-24

Abstract:A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin interconversion (CSI) in graphene/1T-TaS$_2$ van der Waals heterostructures by manipulating the distinct CDW phases in 1T-TaS$_2$. Whereas CSI from spins polarized in all three directions are observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first-principles calculations, which evidence that chiral CDW multidomains are at the origin of the switching of CSI. Our results uncover a new approach for on-demand CSI in low-dimensional systems, paving the way for advanced spin-orbitronic devices.

Materials Science
Spin-orbit and exchange proximity couplings in graphene/1T-TaS$_2$ heterostructure triggered by a charge density wave

Karol Szałowski,Marko Milivojević,Denis Kochan,Martin Gmitra

DOI: https://doi.org/10.1088/2053-1583/acbb19

2023-01-28

Abstract:Proximity-induced fine features and spin-textures of the electronic bands in graphene-based van der Waals heterostructures can be explored from the point of tailoring a twist angle. Here we study spin-orbit coupling and exchange coupling engineering of graphene states in the proximity of 1T-TaS$_2$ not triggering the twist, but a charge density wave in 1T-TaS$_2$-a realistic low-temperature phase. Using density functional theory and effective model we found that the emergence of the charge density wave in 1T-TaS$_2$ significantly enhances Rashba spin-orbit splitting in graphene and tilts the spin texture by a significant Rashba angle-in a very similar way as in the conventional twist-angle scenarios. Moreover, the partially filled Ta $d$-band in the charge density wave phase leads to the spontaneous emergence of the in-plane magnetic order that transgresses via proximity from 1T-TaS$_2$ to graphene, hence, simultaneously superimposing along the spin-orbit also the exchange coupling proximity effect. To describe this intricate proximity landscape we have developed an effective model Hamiltonian and provided a minimal set of parameters that excellently reproduces all the spectral features predicted by the first-principles calculations. Conceptually, the charge density wave provides a highly interesting knob to control the fine features of electronic states and to tailor the superimposed proximity effects-a sort of twistronics without twist.

Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons
Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

Zhen Zhan,Yipei Zhang,Pengfei Lv,Hongxia Zhong,Guodong Yu,Francisco Guinea,Jose Angel Silva-Guillen,Shengjun Yuan

DOI: https://doi.org/10.1103/physrevb.102.241106

2020-01-01

Abstract:Ultraflat bands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials show some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Rapid Communication, using an accurate tight-binding model, we study the formation and evolution of ultraflat bands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflat bands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure, and local deformation can tune the width of the flat bands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flat bands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. Ultraflat bands found in TMDCs with a range of rotation angle below 7 degrees may provide an ideal platform to study strongly correlated states.
Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

L. Antonio Benítez,Williams Savero Torres,Juan F. Sierra,Matias Timmermans,Jose H. Garcia,Stephan Roche,Marius V. Costache,Sergio O. Valenzuela

DOI: https://doi.org/10.1038/s41563-019-0575-1

2019-08-21

Abstract:Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession experiments in properly designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion effiencies can be tailored by electrostatic gating in magnitude and sign, peaking nearby the charge neutrality point with a magnitude that is comparable to the largest efficiencies reported to date. Such an unprecedented electric-field tunability provides a new building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies.

Mesoscale and Nanoscale Physics,Applied Physics
Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides

Klaus Zollner,Simão M. João,Branislav K. Nikolić,Jaroslav Fabian

DOI: https://doi.org/10.1103/PhysRevB.108.235166

2023-10-27

Abstract:We present a DFT-based investigation of the twist-angle dependent proximity spin-orbit coupling (SOC) in graphene/TMDC structures. We find that for Mo-based TMDCs the proximity valley-Zeeman SOC exhibits a maximum at around 15--20°, and vanishes at 30°, while for W-based TMDCs we find an almost linear decrease of proximity valley-Zeeman SOC when twisting from 0° to 30°. The induced Rashba SOC is rather insensitive to twisting, while acquiring a nonzero Rashba phase angle, $\varphi \in [-20;40]$°, for twist angles different from 0° and 30°. This finding contradicts earlier tight-binding predictions that the Rashba angle can be 90° in the studied systems. In addition, we study the influence of several tunability knobs on the proximity SOC for selected twist angles. By applying a transverse electric field in the limits of $\pm 2$ V/nm, mainly the Rashba SOC can be tuned by about 50\%. The interlayer distance provides a giant tunability, since the proximity SOC can be increased by a factor of 2--3, when reducing the distance by about 10\%. Encapsulating graphene between two TMDCs, both twist angles are important to control the interference of the individual proximity SOCs, allowing to precisely tailor the valley-Zeeman SOC in graphene, while the Rashba SOC becomes suppressed. Finally, based on our effective Hamiltonians with fitted parameters, we calculate experimentally measurable quantities such as spin lifetime anisotropy and charge-to-spin conversion efficiencies. The spin lifetime anisotropy can become giant, up to $10^4$, in encapsulated structures. The charge-to-spin conversion, which is due to spin-Hall and Rashba-Edelstein effects, can lead to twist-tunable non-equilibrium spin-density polarizations that are perpendicular and parallel to the applied charge current.

Mesoscale and Nanoscale Physics
In situ twistronics of van der Waals heterostructures

Yaping Yang,Jidong Li,Jun Yin,Shuigang Xu,Ciaran Mullan,Takashi Taniguchi,Kenji Watanabe,A. K. Geim,Konstantin S. Novoselov,Artem Mishchenko,A.K. Geim

DOI: https://doi.org/10.48550/arXiv.2010.03798

2020-10-08

Mesoscale and Nanoscale Physics

Abstract:In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be dramatically changed by a moire pattern induced by twist angles between different layers. Such process is referred to as twistronics, where the tuning of twist angle can be realized through mechanical manipulation of 2D materials. Here we demonstrate an experimental technique that can achieve in situ dynamical rotation and manipulation of 2D materials in van der Waals heterostructures. Using this technique we fabricated heterostructures where graphene is perfectly aligned with both top and bottom encapsulating layers of hexagonal boron nitride. Our technique enables twisted 2D material systems in one single stack with dynamically tunable optical, mechanical, and electronic properties.
All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

Anamul Md. Hoque,Dmitrii Khokhriakov,Klaus Zollner,Bing Zhao,Bogdan Karpiak,Jaroslav Fabian,Saroj P. Dash

DOI: https://doi.org/10.1038/s42005-021-00611-6

2021-06-08

Communications Physics

Abstract:Abstract The ability to engineer new states of matter and control their spintronic properties by electric fields is at the heart of future information technology. Here, we report a gate-tunable spin-galvanic effect in van der Waals heterostructures of graphene with a semimetal of molybdenum ditelluride at room temperature due to an efficient spin-charge conversion process. Measurements in different device geometries with control over the spin orientations exhibit spin-switch and Hanle spin precession behavior, confirming the spin origin of the signal. The control experiments with the pristine graphene channels do not show any such signals. We explain the experimental spin-galvanic signals by theoretical calculations considering the spin-orbit induced spin-splitting in the bands of the graphene in the heterostructure. The calculations also reveal an unusual spin texture in graphene heterostructure with an anisotropic out-of-plane and in-plane spin polarization. These findings open opportunities to utilize graphene-based heterostructures for gate-controlled spintronic devices.

physics, multidisciplinary
Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

Dongwon Shin,Hyeonbeom Kim,Sung Ju Hong,Sehwan Song,Yeongju Choi,Youngkuk Kim,Sungkyun Park,Dongseok Suh,Woo Seok Choi

DOI: https://doi.org/10.1002/adfm.202311287

2024-03-14

Abstract:Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin exchange splitting. The large and adjustable spin exchange splitting of 155.9 - 306.5 meV was obtained by the characteristic shifts in both the spin symmetry broken quantum Hall states and the Shubnikov-de-Haas oscillations. Strong hybridization induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures.

Strongly Correlated Electrons,Materials Science
Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers

Taige Wang,Marc Vila,Michael P. Zaletel,Shubhayu Chatterjee

DOI: https://doi.org/10.1103/physrevlett.132.116504

IF: 8.6

2024-03-16

Physical Review Letters

Abstract:Electrical control of magnetism has been a major technological pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as Bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated Van der Waals heterostructures as a promising platform for spintronics and valleytronics. https://doi.org/10.1103/PhysRevLett.132.116504 © 2024 American Physical Society

physics, multidisciplinary
Berry curvature-induced local spin polarisation in gated graphene/WTe2 heterostructures

Lukas Powalla,Jonas Kiemle,Elio J König,Andreas P Schnyder,Johannes Knolle,Klaus Kern,Alexander Holleitner,Christoph Kastl,Marko Burghard

DOI: https://doi.org/10.1038/s41467-022-30744-3

2022-06-07

Abstract:Experimental control of local spin-charge interconversion is of primary interest for spintronics. Van der Waals (vdW) heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have thus far provided global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we probe the gate-tunable local spin polarisation in current-driven graphene/WTe2 heterostructures through magneto-optical Kerr microscopy. Even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We present a theoretical model which fully explains the gate- and bias-dependent onset and spatial distribution of the intense Kerr signal as a result of a non-linear anomalous Hall effect in the heterostructure, which is enabled by its reduced point group symmetry. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important step toward nanoscale, electrical spin control.
Electrical gate control of spin current in van der Waals heterostructures at room temperature

André Dankert,Saroj P Dash

DOI: https://doi.org/10.1038/ncomms16093

2017-07-05

Abstract:Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS2). Here we combine graphene and MoS2 in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. By performing non-local spin valve and Hanle measurements, we unambiguously prove the gate tunability of the spin current and spin lifetime in graphene/MoS2 vdWhs at 300 K. This unprecedented control over the spin parameters by orders of magnitude stems from the gate tuning of the Schottky barrier at the MoS2/graphene interface and MoS2 channel conductivity leading to spin dephasing in high-SOC material. Our findings demonstrate an all-electrical spintronic device at room temperature with the creation, transport and control of the spin in 2D materials heterostructures, which can be key building blocks in future device architectures.
Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature

Dmitrii Khokhriakov,Anamul Md. Hoque,Bogdan Karpiak,Saroj P. Dash

DOI: https://doi.org/10.1038/s41467-020-17481-1

2020-08-07

Abstract:Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a nonequilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
Revealing hidden spin polarization in centrosymmetric van der Waals materials on ultrafast timescales

B. Arnoldi,S. L. Zachritz,S. Hedwig,M. Aeschlimann,O. L. A. Monti,B. Stadtmüller

DOI: https://doi.org/10.1038/s41467-024-47821-4

IF: 16.6

2024-04-27

Nature Communications

Abstract:Abstract One of the key challenges for spintronic and quantum technologies is to achieve active control of the spin angular momentum of electrons in nanoscale materials on ultrafast, femtosecond timescales. While conventional ferromagnetic materials and materials supporting spin texture suffer both from conceptional limitations in miniaturization and inefficiency of optical and electronic manipulation, non-magnetic centrosymmetric layered materials with hidden spin polarization may offer an alternative pathway to manipulate the spin degree of freedom by external stimuli. Here we demonstrate an approach for generating transient spin polarization on a femtosecond timescale in the otherwise spin-unpolarized band structure of the centrosymmetric 2H-stacked group VI transition metal dichalcogenide WSe 2 . Using ultrafast optical excitation of a fullerene layer grown on top of WSe 2 , we trigger an ultrafast interlayer electron transfer from the fullerene layer into the WSe 2 crystal. The resulting transient charging of the C 60 /WSe 2 interface leads to a substantial interfacial electric field that by means of spin-layer-valley locking ultimately creates ultrafast spin polarization without the need of an external magnetic field. Our findings open a novel pathway for true optical engineering of spin functionalities such as the sub-picosecond generation and manipulation of ultrafast spin currents in 2D heterostructures.

multidisciplinary sciences
Spin-orbit proximity in MoS 2 /bilayer graphene heterostructures

Michele Masseroni,Mario Gull,Archisman Panigrahi,Nils Jacobsen,Felix Fischer,Chuyao Tong,Jonas D. Gerber,Markus Niese,Takashi Taniguchi,Kenji Watanabe,Leonid Levitov,Thomas Ihn,Klaus Ensslin,Hadrien Duprez

DOI: https://doi.org/10.1038/s41467-024-53324-z

IF: 16.6

2024-10-27

Nature Communications

Abstract:Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin–orbit coupling (SOC) in graphene. Future devices concepts require the understanding of the precise nature of SOC in TMD/bilayer graphene heterostructures and its influence on electronic transport phenomena. Here, we experimentally confirm the presence of two distinct types of SOC – Ising ( Δ I = 1.55 meV) and Rashba ( Δ R = 2.5 meV) – in bilayer graphene when interfaced with molybdenum disulfide. Furthermore, we reveal a non-monotonic trend in conductivity with respect to the electric displacement field at charge neutrality. This phenomenon is ascribed to the existence of single-particle gaps induced by the Ising SOC, which can be closed by a critical displacement field. Our findings also unveil sharp peaks in the magnetoconductivity around the critical displacement field, challenging existing theoretical models.

multidisciplinary sciences
Giant asymmetric proximity-induced spin-orbit coupling in twisted graphene/SnTe heterostructure

Marko Milivojevic,Martin Gmitra,Marcin Kurpas,Ivan Stich,Jaroslav Fabian

DOI: https://doi.org/10.1088/2053-1583/ad59b4

IF: 6.861

2024-06-20

2D Materials

Abstract:We analyze the spin-orbit coupling effects in a three-degree twisted bilayer heterostructure made of graphene and an in-plane ferroelectric SnTe, with the goal of transferring the spin-orbit coupling from SnTe to graphene, via the proximity effect. Our results indicate that the point-symmetry breaking due to the incompatible mutual symmetry of the twisted monolayers and a strong hybridization has a massive impact on the spin splitting in graphene close to the Dirac point, with the spin splitting values greater than 20 meV. The band structure and spin expectation values of graphene close to the Dirac point can be described using a symmetry-free model, triggering different types of interaction with respect to the threefold symmetric graphene/transition-metal dichalcogenide heterostructure. We show that the strong hybridization of the Dirac cone's right movers with the SnTe band gives rise to a large asymmetric spin splitting in the momentum space. Furthermore, we discover that the ferroelectricity-induced Rashba spin-orbit coupling in graphene is the dominant contribution to the overall Rashba field, with the effective in-plane electric field that is almost aligned with the (in-plane) ferroelectricity direction of the SnTe monolayer. We also predict an anisotropy of the in-plane spin relaxation rates. Our results demonstrate that the group-IV monochalcogenides MX (M=Sn, Ge; X=S, Se, Te) are a viable alternative to transition-metal dichalcogenides for inducing strong spin-orbit coupling in graphene.

materials science, multidisciplinary
Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$

Franz Herling,C. K. Safeer,Josep Ingla-Aynés,Nerea Ontoso,Luis E. Hueso,Fèlix Casanova

DOI: https://doi.org/10.1063/5.0006101

2020-06-16

Abstract:The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe$_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications.

Mesoscale and Nanoscale Physics

Tunable spin–orbit physics in van der Waals heterostructures

Twist-angle-tunable spin texture in WSe 2 /graphene van der Waals heterostructures

Twist-angle tunable spin texture in WSe$_2$/graphene van der Waals heterostructures

AControl of Charge‐Spin Interconversion in Van Der Waals Heterostructures with Chiral Charge Density Waves

Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer

Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves

Spin-orbit and exchange proximity couplings in graphene/1T-TaS$_2$ heterostructure triggered by a charge density wave

Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides

In situ twistronics of van der Waals heterostructures

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers

Berry curvature-induced local spin polarisation in gated graphene/WTe2 heterostructures

Electrical gate control of spin current in van der Waals heterostructures at room temperature

Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature

Revealing hidden spin polarization in centrosymmetric van der Waals materials on ultrafast timescales

Spin-orbit proximity in MoS 2 /bilayer graphene heterostructures

Giant asymmetric proximity-induced spin-orbit coupling in twisted graphene/SnTe heterostructure

Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$