Abstract:Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenides (TMDs) heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and manipulation of excitons and their complexes in monolayer (1L) MoSe2-WSe2 lateral heterostructure (LHS), directly grown via water-assisted chemical vapor deposition. Using a field-effect transistor design by incorporating a few-layer graphene back gate, single-layer graphene edge contact and encapsulation with few-layer hexagonal boron nitride, we achieve precise electrical tuning of exciton complexes and their transfer across 1D interfaces. At cryogenic temperatures (4 K), photoluminescence and photocurrent maps reveal the synergistic effect of local electric field and interface phenomena in the modulation of excitons, trions, and free carriers. We observe spatial variations in exciton and trion densities driven by exciton-trion conversion under electrical manipulation. The first-principle density functional theory calculation reveals significant band modification at the lateral interfaces and graphene-TMDs contact region. Furthermore, we demonstrate the versatility of 2D TMDS LHS in hosting and manipulating quantum emitters, achieving precise control over narrow-band emissions through modulating carrier injection and electrical biasing. This work extends the boundary of the present understanding of excitonic behaviour within lateral heterojunctions, highlighting the potential for controlled exciton manipulation across 1D interfaces and paving the way for next-generation electro-optical quantum devices.

Charge Density Modulation and the Luttinger Liquid State in MoSe 2 Mirror Twin Boundaries

Formation mechanism of mirror twin grain boundaries in molecular beam epitaxy grown monolayer WSe2-MoSe2 lateral heterojunctions

Quantum Confined Tomonaga-Luttinger Liquid in Mo6Se6 Nanowires Converted from an Epitaxial MoSe2 Monolayer

Charge Density Wave Order in 1d Mirror Twin Boundaries of Single-Layer Mose2

Tuning the Atomic and Electronic Structures of Mirror Twin Boundaries in Molecular Beam Epitaxy Grown MoSe2 Monolayers Via Rhenium Doping

Quantum Confined Tomonaga-Luttinger Liquid in MoSe2 Twin Domain Boundaries

Epitaxially defined Luttinger liquids on MoS$_2$ bicrystals

Direct Observation of One-Dimensional Peierls-Type Charge Density Wave in Twin Boundaries of Monolayer MoTe_2

Discovery of an Unconventional Charge Modulation on the Surface of Charge-Density-wave Material TaTe4

Post-Synthesis Tellurium Doping Induced Mirror Twin Boundaries in Monolayer Molybdenum Disulfide

Visualization of Confined Electrons at Grain Boundaries in a Monolayer Charge‐Density‐Wave Metal

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Band Bending and Valence Band Quantization at Line Defects in MoS$_2$

Charge Density Wave States in 2H-Mote 2 Revealed by Scanning Tunneling Microscopy

Electronic structures, charge transfer and charge orders in twisted transition metal dichalcogenide bilayers

Interlayer Exciton Transport in MoSe 2 /WSe 2 Heterostructures

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Pseudogap with Fermi arcs and Fermi pockets in half-filled twisted transition metal dichalcogenides

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

Electronic Janus lattice and kagome-like bands in coloring-triangular MoTe2 monolayers

Dense Network of One-Dimensional Mid-Gap Metallic Modes in Monolayer MoSe2 and Their Spatial Undulations