Charge Transfer Gap Tuning via Structural Distortion in Monolayer 1T-NbSe 2

Zhen-Yu Liu,Shuang Qiao,Bing Huang,Qiao-Yin Tang,Zi-Heng Ling,Wen-Hao Zhang,Hui-Nan Xia,Xin Liao,Hu Shi,Wen-Hao Mao,Gui-Lin Zhu,Jing-Tao Lü,Ying-Shuang Fu
DOI: https://doi.org/10.1021/acs.nanolett.1c02348
IF: 10.8
2021-08-05
Nano Letters
Abstract:The Mott state in 1T-TaS2 is predicted to host quantum spin liquids (QSLs). However, its insulating mechanism is controversial due to complications from interlayer coupling. Here, we study the charge transfer state in monolayer 1T-NbSe2, an electronic analogue to TaS2 exempt from interlayer coupling, using spectroscopic imaging scanning tunneling microscopy and first-principles calculations. Monolayer NbSe2 surprisingly displays two types of star of David (SD) motifs with different charge transfer gap sizes, which are interconvertible via temperature variation. In addition, bilayer 1T-NbSe2 shows a Mott collapse by interlayer coupling. Our calculation unveils that the two types of SDs possess distinct structural distortions, altering the effective Coulomb energies of the central Nb orbital. Our calculation suggests that the charge transfer gap, the same parameter for determining the QSL regime, is tunable with strain. This finding offers a general strategy for manipulating the charge transfer state in related systems, which may be tuned into the potential QSL regime.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.1c02348.Methods of the research, possible origin of the 160 meV state, reversible SD transition at 4 K, derivation of the effective Hubbard energy for a hybridized p–d orbital, details of the temperature-dependent SD transition, calculated phonon spectrum of 1T-NbSe2, and calculated bands of 1T-NbSe2 and 1T-TaS2 under strain (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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