Abstract:Two-dimensional(2D)semiconductors offer an atomic thickness that facilitates superior gate field penetration and enables transistors to maintain shrinking with suppressed short-channel effects,thereby being considered as channel materials for future transistors in the post-Moore era.As a member of high-mobility 2D semiconductors,the air-stable Bi2O2Se with a moderate bandgap has drawn significant attention.Distinguished from other 2D materials,Bi2O2Se can be oxidized layer-by-layer to form a high-k native-oxide dielectric,Bi2SeO5,with an atomically sharp interface,similar to Si/SiO2 in the semiconductor industry.These characteristics make Bi2O2Se an ideal material platform for fabricating various devices with excellent performance,such as transistors,thermoelectrics,optoelectronics,sensors,flexible devices and memory devices.To realize advanced applications of 2D Bi2O2Se,it is essential to develop scalable and high-quality preparation methods with relatively low cost.Chemical vapor deposition(CVD)has shown promise in meeting these requirements.Over the past years,CVD has been widely used to synthesize 2D Bi2O2Se despite some remaining challenges.In this review,we summarize the recent progress in the controlled growth of 2D Bi2O2Se via the CVD method.We begin by introducing the crystal structure and properties of Bi2O2Se.Next,we focus on the morphology control of 2D Bi2O2Se,including various nucleation modes and different dimensionalities by carefully manipulating the CVD process.In terms of nucleation modes,in-plane and vertical epitaxial growth of Bi2O2Se,achieved by controlling the interaction between epitaxial layer and substrate,are reviewed.Wafer-scale continuous Bi2O2Se film facilitates the device integration while vertical 2D fins pave the way for fabricating high-performance fin field-effect-transistors(FinFET).As for the dimensionality control,the transition from 2D nanoplates to 1D nanoribbons is investigated.Parameters such as precursor ratio,growth temperature and types of catalyst play a key role in such transition.We then discuss the construction of ordered arrays of Bi2O2Se with the above morphology by selective growth and post treatment for potential device integration.In addition,we highlight the electrical quality improvement of the grown material via defect control and strain release.For example,both the Se poor growth condition and the out-of-plane strain-free growth contribute to higher mobility of Bi2O2Se.Lastly,we propose potential strategies for precise control of Bi2O2Se structures and quality.In order to meet the demands of advanced electronic applications,more efforts are expected to made to achieve uniform,transferable and site-specific preparation of high-quality single-crystal Bi2O2Se on a large scale.

Tale of Two Bismuth Alkylthiolate Precursors’ Bifurcating Paths in Chemical Vapor Deposition

(Invited) Thermal Atomic Layer Deposition of Elemental Antimony and Bismuth Films

Bi[Se‐(2‐Me2NC6H4)]3: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

Preparation of Nanocrystalline Bismuth Sulfide Thin Films by Asynchronous-Pulse Ultrasonic Spray Pyrolysis Technique

Exploring and fine tuning the properties of one dimensional Bi2S3 nanorods

Preparation and Characterization of High Quality Bi1-xSbx Thin Films: A Sputtering Deposition Approach

Low-Temperature Synthesis of Bi2S3 Hierarchical Microstructures via Co-Precipitation and Digestive Process in Aqueous Medium

Electrochemically Deposited Thermoelectric Bismuth-Telluride Films

Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor

Atomic layer deposition and characterization of Bi1Se1 thin films

Synthesis and characterisation of oriented Bi<sub>2</sub>S<sub>3</sub> thin films by novel ultrasonic assisted cathodic electrodeposition route

Hydrothermal preparation and characterization of rod-like ultrafine powders of bismuth sulfide

Synthesis of ternary copper antimony sulfide via solventless thermolysis or aerosol assisted chemical vapour deposition using metal dithiocarbamates

Formation of antimony sulfide powders and thin films from single-source antimony precursors

Investigating the Effect of Steric Hindrance within CdS Single-Source Precursors on the Material Properties of AACVD and Spin-Coat-Deposited CdS Thin Films

Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se:Controllability and Material Quality

Synthesis and characterization Bi2O2S thin film via chemical bath deposition at low pH

Direct Observation of the Epitaxial Growth of Bismuth Telluride Topological Insulators from One-Dimensional Heterostructured Nanowires

Atomic layer deposition of SnS2 film on a precursor pre-treated substrate

Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

Two-step Synthesis of Antimony Sulfide Thin films: Enhancement in Physical Properties Through Sulfurization