Abstract:The morphology of PbGa2Se4 crysal and properties. Figure a. shows the Ultraviolet‐visible spectroscopy diffuse reflectance spectrum and estimates bandgap of 2.26 eV. Figure b. shows the Current ‐Voltage cure and the trap density(nt) is estimated as 2.24×1011cm−3 by space charge limited current method. Figure c. shows tansient photoreponse at different illumunation power densities from 0.5 to 12 mW/cm2. Ternary chalcogenide PbGa2Se4 with high resistivity, photosensitivity, and excellent nonlinear properties, exhibits a potential application in optoelectronic and nonlinear optical devices. However, the preparation of large‐sized pure PbGa2Se4 crystals is challenging due to the presence of peritectic reaction L+α(Ga2Se3)→PbGa2Se4 and a narrow homogeneity region. Here, a "quenching‐annealing" method (quenching at 850 °C in ice water, and then annealing at 650 °C for 250 h by reheating) is developed to eliminate the PbSe second phase during the synthesis. Subsequently, the PbGa2Se4 single crystals are successfully grown using chemical vapor transport (CVT) with the I2 as the transport agent. The resulting crystal exhibits the crystal structure belonging to Fddd space group with the lattice parameters of a = 12.7192 Å, b = 21.2831 Å, and c = 21.5226 Å. Additionally, it possesses a wide bandgap (≈2.26 eV), high resistivity (6.59 × 1012 Ω·cm), and defect density calculated via space charge limited current measurement (SCLC) as 2.46 × 1011 cm−3. Photodetectors based on these as‐grown crystals demonstrate exceptional photosensitivity along with a high detectivity (3.2 × 108 Jones).

Temperature dependence of photoconductivity in layered semiconductor p-GaSe

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Photoelectric Properties of GaS1−xSex (0 ≤ x ≤ 1) Layered Crystals

Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.

A Systematic Study of the Temperature Dependence of the Dielectric Function of GaSe Uniaxial Crystals from 27 to 300 K

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method

Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements

Experimental study of negative photoconductivity in n-PbTe(Ga) epitaxial films

The Influence of Temperature on the Photoelectric Properties of GeSe Nanowires

Optically enhanced photoconductivity in semi‐insulating gallium arsenide

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Temperature-dependent Optical Properties of Pb1−xMnxSe Films Epitaxially Grown on Zn0.04Cd0.96Te Substrates

Phase Transformation and Tunable Optoelectrical Properties of Two-Dimensional Layered GaTe 1– x Se x Crystals

Study of Transient Photoconductivity of Gan Epilayer Grown by Metalorganic Chemical Vapor Deposition

Thermoluminescence characterization of (Ga2Se3)0.25 – (Ga2S3)0.75 single crystal compounds

Refined Synthesis and Single Crystal Growth of PbGa2Se4 by Chemical Vapor Transport Method for Photodetection

Impact of the Ge-Si interfacial barrier on the temperature-dependent performance of PureGaB Ge-on-Si p?^+?n photodiodes

Thermoluminescence characteristics of GaSe and Ga2Se3 single crystals

Glass-like Electronic and Thermal Transport in Crystalline Cubic Germanium Selenide

Effectiveness of AlGaAs barrier layers as a redistribution channel of photoexcited carriers on anomalous temperature dependence of photoluminescence properties of GaAs quantum dots