Abstract:A memristor based on graphene oxide with stable complementary resistive switching characteristics is fabricated, and the "IMP," "AND," and "NOR" logic functions are successfully realized by using this device. The unique structure of the device enables it to implement IMPLY logic independently, which provides a new scheme for the physical realization of memristor‐based logic circuits. The logic circuit is the main component of an integrated circuit chip that dictates the operation and performance of the chip. The logic circuit based on a memristor can improve the integration and operation speed of the existing integrated circuit and reduce the chip size and the number of devices used by a single logic circuit. However, most of the research on logic circuits based on memristors has focused only on simulations, and research on the realization of logic circuits by hardware using actual memristors is limited. In this paper, a memristor based on graphene oxide with stable complementary resistive switching characteristics is fabricated, a logic circuit is built by using this device, and the logic functions of "IMP," "AND," and "NOR" are successfully realized. The complementary resistive switching device can alleviate the severe power loss caused by the memory separation of the von Neumann architecture. Moreover, its unique structure enables it to realize material logic independently without the use of multiple memristors and resistors, providing a new scheme for the physical realization of logic circuits. It also opens up a new path for integrated chips to break through von Neumann architecture.

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