Realization of nociceptive receptors based on Mott memristors

Yanji Wang,Yu Wang,Yanzhong Zhang,Xinpeng Wang,Hao Zhang,Rongqing Xu,yi tong
DOI: https://doi.org/10.35848/1882-0786/ad1fa7
IF: 2.819
2024-01-19
Applied Physics Express
Abstract:Nociceptive receptors primarily responsible for responding to potentially harmful stimuli. We designed Pt/Ag/NbOx/W memristors with threshold switching (TS) characteristic and low working voltage attribute to the diffusion of Ag ions within the device. Furthermore, this device emulates the functions of a leaky integrate-and-fire (LIF) neuron and nervous pain perception functions, respectively. The artificial neurons exhibit neural functions, including leaky integration, threshold-driven firing , self-relaxation characteristics, and allodynia, hyperalgesia of the nociceptor. The proposed threshold-switching memristor shows potential in the field of neuromorphic computing and creating intelligent systems that can replicate the complexity of the human brain.
physics, applied
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