Abstract:Bio‐voltage diffusive memristors operating at voltages of 40–80 mV with high Ion⁄Ioff ratio of 106 and steep switching turn ON and OFF slopes of 0.77 and 0.88 mV per decade, respectively are developed from CVD grown WSe2. Artificial Nociceptors are emulated using these diffusive memristors. These demonstrations suggest the feasibility of low‐power diffusive memristors for bio‐inspired computing, humanoid robots, and electronic skins. Memristors have emerged as a promising candidate to mimic the human behavior and thus unlocking the potential for bio‐inspired computing advancement. However, these devices operate at a voltages which are still far from the energy‐efficient biological counterpart, which uses an action potential of 50–120 mV to process the information. Here, a diffusive memristor is reported from synthetic WSe2 fabricated in Ag/WSe2/Au vertical device geometry. The devices operate at bio‐voltages of 40–80 mV with Ion/Ioff ratio of 106 and steep switching turn ON and OFF slopes of 0.77 and 0.88 mV per decade, respectively. The power consumption in standby mode and power per set transition are found to be 10 fW and 64 pW, respectively. Further, the diffusive memristors are utilized to emulate the nociceptor, a special receptor for sensory neurons that selectively responds to noxious stimuli. Nociceptor in turn imparts a warning signal to the central nervous system which then triggers the motor response to take precautionary actions to prevent the body from injury. The key features of a nociceptor including "threshold", "relaxation", "no‐adaptation" and "sensitization" are demonstrated using artificial nociceptors. These illustrations imply the feasibility of developing low‐power diffusive memristors for bio‐inspired computing, humanoid robots, and electronic skins.

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