Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

Naveed Ur Rehman,Aziz Ullah,Muhammad Adil Mahmood,Nasir Rahman,Mohammad Sohail,Shahid Iqbal,Nizomiddin Juraev,Khaled Althubeiti,Sattam Al Otaibi,Rajwali Khan

DOI: https://doi.org/10.1039/d4ra01250j

IF: 4.036

2024-04-13

RSC Advances

Abstract:Neuromorphic computing is a new field of information technology, which is inspired by the biomimetic properties of the memristor as an electronic synapse and neuron. If there are electronic receptors that can transmit exterior impulses to the internal nervous system, then the use of memristors can be expanded to artificial nerves. In this study, a layer type memristor is used to build an artificial nociceptor in a very feasible and straightforward manner. An artificial nociceptor is demonstrated here through the fabrication and characterization of a cobalt-doped zinc oxide (CZO)/Au based memristor. In order to increase threshold switching performance, the surface effects of the CZO layer are eliminated by adding cobalt cobalt-doped zinc oxide (CZO) layer between the P ++ -Si and Au electrodes. Allodynia, hyperalgesia, threshold, and relaxation are the four distinct nociceptive behaviours that the device displays based on the strength, rate of relapse, and duration of the external stimuli. The electrons that are trapped in or released from the CZO layer's traps are responsible for these nociceptive behaviours. A multipurpose nociceptor performance is produced by this type of CZO-based device, which is crucial for artificial intelligence system applications such as neural integrated devices with nanometer-sized characteristics.

chemistry, multidisciplinary

What problem does this paper attempt to address?

The problem this paper attempts to address is the development of a memristor based on cobalt-doped zinc oxide (CZO) to simulate the functions of biological nociceptors, thereby achieving the functions of artificial neurons and synapses in bionic technology.

Specifically, the researchers constructed and characterized a CZO/Au-based memristor, demonstrating its ability to simulate four different pain perception behaviors: allodynia, hyperalgesia, threshold response, and relaxation. These behaviors were achieved by varying the intensity, frequency, and duration of external stimuli. The researchers found that the electron trapping and release mechanisms in the CZO layer are key factors leading to these pain perception behaviors.

Additionally, the study explored the potential applications of CZO memristors in artificial neural networks and nanoscale neural integration devices, particularly in simulating synaptic connections in the brain within artificial intelligence systems. By optimizing the structure and performance of the CZO layer, the researchers hope that this device can play an important role in future bionic computing systems.