Abstract:Two-dimensional (2D) ferroelectric materials have intrinsic polarized electric field, when they stack with other 2D materials to construct ferroelectric van der Waals heterostructures, they will produce a lot of novel properties, which has aroused extensive research interests. Therefore, based on first-principle calculations, we have comprehensively studied the electronic properties of LaBr2/α-In2Se3 ferroelectric heterostructures to investigate the reversibility and nonvolatility with information. Our calculations show that, the system is a ferromagnetic semiconductor with intrinsic valley polarization when α-In2Se3 is in the ferroelectric polarized up state. By switching the ferroelectric polarization of α-In2Se3, the heterostructure undergoes a transition from semiconductor to half metal, which can be attributed to the competition between the built-in electric field (E int ) and the polarized electric field E pi → ,generated by the charge transfer at interface of heterostructure and the bound charge of α-In2Se3, respectively. Besides, the band arrangement types of LaBr2/α-In2Se3 heterostructure can be well modulated under extra electric filed and biaxial strain. Furthermore, we have observed valley-submerging under electric filed and strain, which indicates the valleytronic nature can also be on-off in LaBr2/α-In2Se3 heterostructures. More importantly, the realization of reversible and non-volatile properties depends on the intrinsic characteristics of heterostructure and does not require external mechanisms. Our research not only provides the possibility for the application of the LaBr2/α-In2Se3 heterostructures in nanodevices, but also give the theoretical support to the study of spintronics and valleytronics.

Two-dimensional Multiferroic RuClF/AgBiP2S6 van der Waals Heterostructure with Valley Splitting Properties and Controllable Magnetic Anisotropy

Valley polarization and magnetic anisotropy of two-dimensional Ni2Cl3I3/MoSe2 heterostructure

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

Ferroelectric polarization tailored interfacial charge distribution to modify magnetic properties of two-dimensional Janus FeBrI/In 2 S 3 heterostructures

The reversible and nonvolatile properties of 2D LaBr2/α-In2Se3 heterostructure by strain and electric field modulation

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Ferroelectric control of magnetic coupling of monolayer MnBr 2 in semiconducting multiferroic van der Waals heterostructure

Ferrovalleytricity in a two-dimensional antiferromagnetic lattice

Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer

Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

2D CrMoC2S6/Sc2CO2 multiferroic heterostructure with robust antiferromagnetic ordering, switchable electronic properties and magnetic anisotropy

Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Atypical breathing driven two-dimensional valley multiferroicity

Ferroelectrically controlled electromagnetic and transport properties of VN2H2/Al2O3 van der Waals multiferroic heterostructures

Artificial Multiferroics and Enhanced Magnetoelectric Effect in van der Waals Heterostructures

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Tunable Magnetic Anisotropy and Dzyaloshinskii-Moriya Interaction in an Ultrathin van der Waals Fe3GeTe2/In2Se3 Heterostructure