Abstract:The recent rediscovery of 1D and quasi-1D (q-1D) van der Waals (vdW) crystals has laid foundation to the realization of emergent electronic, optical, and quantum-confined physical phenomena in both bulk and at the nanoscale. Of these, the highly anisotropic q-1D vdW crystal structure and the visible-light optical/optoelectronic properties of antimony trisulfide (Sb 2 S 3 ) have led to its widespread consideration as a promising building block for photovoltaic and non-volatile phase change devices. However, while these applications will greatly benefit from well-defined and sub-nanometer-thick q-1D structures, little has been known about feasible synthetic routes that can access single covalent chains of Sb 2 S 3 . In this work, we explore how encapsulation in single or multi-walled carbon nanotubes (SWCNTs or MWCNTs) and visible-range transparent boron nitride nanotubes (BNNTs) influences the growth and phase of Sb 2 S 3 nanostructures. We demonstrate that nanotubes with smaller diameters had a more pronounced effect in the crystallographic growth direction and orientation of Sb 2 S 3 nanostructures, promoting the crystallization of the guest structures along the long-axis [010]-direction. As such, we were able to reliably access well-ordered few- to single covalent chains of Sb 2 S 3 when synthesized within defect-free SWCNTs with sub-2 nm inner diameters. Intriguingly, we found that the degree of crystalline order of Sb 2 S 3 nanostructures was strongly influenced by the presence of defects and discontinuities along the Sb 2 S 3 -nanotube interface. We show that amorphous nanowire domains of Sb 2 S 3 form around defect sites in larger, multi-walled nanotubes that manifest inner wall defects and discontinuities, suggesting a means to manipulate the crystallization dynamics of confined sub-10 nm-thick Sb 2 S 3 nanostructures within nanotubes. Lastly, we show that ultranarrow amorphous Sb 2 S 3 can impart functionality onto isolable BNNTs with photocurrent generation in the pA range which, alongside the dispersibility of the Sb 2 S 3 @BNNTs, could be leveraged to easily fabricate photoresistors only a few nm in width. Altogether, our results serve to solidify the understanding of how q-1D vdW pnictogen chalcogenides crystallize within confined synthetic platforms and are a step towards realizing functional materials from ensembles of encapsulated heterostructures.

Spontaneous formation of monocrystalline nanostripes in the molecular beam epitaxy of antimony triselenide

The High Anisotropy Of The Epitaxial Growth Of The Well-Aligned Sb2se3 Nanoribbons On Mica

Antimony oxide nanostructures in the monolayer limit: self-assembly of van der Waals-bonded molecular building blocks

Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications

Surface-mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures.

Graphoepitaxy of Large Scale, Highly Ordered CsPbBr3Nanowire Array on Muscovite Mica (001) Driven by Surface Reconstructed Grooves

Van der Waals Epitaxy of Pulsed Laser Deposited Antimony Thin Films on Lattice-matched and Amorphous Substrates

Self-assembled ErSb Nanostructures of Tunable Shape and Orientation: Growth and Plasmonic Properties

Blown Bubble Assembly of Ultralong 1D Bismuth Sulfide Nanostructures with Ordered Alignment and Shape Control

Highly Anisotropic Sb2Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure

The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy

Antimony Nanowire Arrays Fabricated by Pulsed Electrodeposition in Anodic Alumina Membranes

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets.

Graphoepitaxy of Large Scale, Highly Ordered CsPbBr 3 Nanowire Array on Muscovite Mica (001) Driven by Surface Reconstructed Grooves

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Faceted nanostructure arrays with extreme regularity by self-assembly of vacancies

Polarization driven covalently-bonded octahedral-twinning and backbone-peripheral-helical nanoarchitectures.

Encapsulation of Crystalline and Amorphous Sb 2 S 3 within Carbon and Boron Nitride Nanotubes

Van Der Waals Epitaxy of SnS Film on Single Crystal Graphene Buffer Layer on Amorphous SiO2/Si

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions