Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Low-oxygen silicon preparation from diamond wire saw silicon powder waste: Oxidation control with microwave-vacuum treatment

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Removal of metal impurities from diamond wire saw silicon powder by vacuum electromagnetic directional solidification

A new strategy for de-oxidation of diamond-wire sawing silicon waste via the synergistic effect of magnesium thermal reduction and hydrochloric acid leaching

Al2O3 and CaO As Sintering Aids: A Strategy to Remove Impurity Boron and SiO2 Surface-Layer of Diamond Wire Saw Silicon Waste

Study on the Separation and Sedimentation Performance of Silicon from Diamond Wire Saw Silicon Powder Slurry

A High-Efficiency and Energy-Saving Method for Purifying Industrial Silicon for Silicone Use

Preparation of Low-Boron Silicon from Diamond Wire Sawing Waste by Pressure-Less Sintering and CaO–SiO2 Slag Treatment

Recycling of silicon from waste PV diamond wire sawing silicon powders: A strategy of Na2CO3-assisted pressure-less sintering and acid leaching

Application of Pressure-less Sintering and Dynamic-Slag Treatment to Recover Diamond Wire Saw Silicon Powder

Melting Behavior of Diamond Wire Saw Silicon Powder after Acid Leaching Treatment during Recycling Process

Recycling of kerf loss silicon: An optimized method to realize effective elimination of various impurities

Preoxidation UV Treatment of Silicon Wafers

A New Low-Cost Approach to Fabricate Silicon Dioxide for Insulator of Through-Silicon-Via

Improving flotation separation of micro Si/SiC particles from silicon sawing waste by surface hydrophilic modification

Review of Silicon Recovery from Diamond Wire Saw Silicon Powder Waste Based on Hydrometallurgical Process

Recycling of diamond-wire sawing silicon powder by direct current assisted directional solidification

A Metal-Free Additive Texturization Method Used for Diamond-Wire-sawn Multi-Crystalline Silicon Wafers

Oxygen removal and silicon recovery from polycrystalline silicon kerf loss by combining vacuum magnesium thermal reduction and hydrochloric acid leaching

Efficient Preparation of Si3N4 by Microwave Treatment of Solar-Grade Waste Silicon Powder

Microwave-Assisted Acid Leaching for Recovery of Silicon from Diamond-Wire Cutting Waste Slurry