Doping level effects in Gd/Cr co-doped Bi3TiNbO9 Aurivillius-type ceramics with improved electrical properties

Yu Chen,Huajiang Zhou,Qingyuan Wang,Jianguo Zhu

DOI: https://doi.org/10.1016/j.jmat.2021.12.008

IF: 8.589

2021-12-01

Journal of Materiomics

Abstract:In this work, different amount of Cr2O3 (x = 0–0.3 wt%) as dopant were doped into the Aurivillius-type compound Bi2.8Gd0.2TiNbO9 (BGTN), such a kind of Gd/Cr co-doped Bi3TiNbO9 ceramics with improved electrical properties were synthesized by the convenient solid-state reaction route. The substitution of Cr3+ for Ti4+ at B-site induced the lattice distortion of pseduo-perovskite layer. Fewer Cr2O3 dopant (x<0.2) resulted in the grain refinement of ceramics. After Cr2O3 was added into BGTN, T C decreased to the vicinity of 908 °C. Below T C, the relaxed dielectric response resulted from charge carriers hopping induced another board dielectric permittivity peak, whose starting temperature shifts toward lower side gradually with increase of x. The values of E a con calculated from the Arrhenius relationship between conductivity and temperature indicated the intrinsic conduction at high temperature is dominated by the long-range migration of doubly ionized oxygen vacancies. Moderate Cr2O3 dopant (x = 0.1–0.25) are conducive to the enhancement of piezoelectric property and thermal stability. The sample with x = 0.2 achieved both a high T C∼903 °C and a high d 33∼18 pC/N at the same time. Also, its d 33 can retain 80% of the initial value after the sample was annealed at 800 °C for 4 h.

materials science, multidisciplinary,chemistry, physical,physics, applied