Abstract:Advances in applications of nitrogen-vacancy (NV) spin centers in diamond for sensing and quantum metrology depend critically on the NV fabrication methods. One such technique combines epitaxial diamond growth and electron or ion irradiation (He, C, etc.), where NVs are activated by vacancy trapping at the nitrogen donor atoms upon thermal diffusion. In this work we study the efficiency of such method by analyzing NV depth profiles created by 340keV and also 4keV He irradiation in high purity CVD and HPHT diamond crystals and subjected to sequent annealing at 950◦C and 1200◦C temperatures. This analysis is coupled with the measurement of NV density in the bulk of CVD diamonds with nitrogen doping at low-ppb and low-ppm levels, exposed to MeV electrons in a wide range of the doses. For data analysis we developed an atomistic model based on probabilistic atomic jumps in a crystal lattice, which considers competitive trapping between di-(V 2 ) or multi-vacancy defects compared to that of NVs. The efficiency of NV formation was defined as a ratio of the corresponding capture cross sections: σ NV vs. σ V 2 . Applying this model to the experimental data, the σ NV / σ V 2 ratio was estimated about 0.1-to-0.5, where the activation energy of vacancy diffusion of about 1.7 eV was evaluated by 3-D localization of individual NVsin depth profiles in a confocal microscope and sampling their spin coherence properties (T 2 ). In addition, we noted two subsidiary effects also discussed here: (i) reduction of NV density within the stopping range of the implanted He atoms after 1200◦ annealing and, (ii) partial suppression of NVs at near-surface areas visible only at low-dose electron exposures. The results of this study could be helpful to optimize the NV fabrication process reducing the density of "collateral" lattice damage.

Spin coherence and depths of single nitrogen-vacancy centers created by ion implantation into diamond via screening masks

Spectrally stable nitrogen-vacancy centers in diamond formed by carbon implantation into thin microstructures

Coherence Times of Precise Depth Controlled NV Centers in Diamond.

Coherence times of precisely depth controlled NV centers in diamond

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

NV centres by vacancies trapping in irradiated diamond: Experiments and modelling

Efficient Generation of Nanoscale Arrays of Nitrogen-Vacancy Centers with Long Coherence Time in Diamond

Towards optimized surface $δ$-profiles of nitrogen-vacancy centers activated by helium irradiation in diamond

Shallow NV centers augmented by exploiting n-type diamond

Effect of Low-Damage Inductively Coupled Plasma on Shallow NV Centers in Diamond

CVD-growth of ultra-pure diamond, generation of NV centers by ion-implantation and their spectroscopic characterization for quantum technological applications

Effect of Low-Damage Inductively Coupled Plasma on Shallow Nitrogen-Vacancy Centers in Diamond

Generation of Nitrogen-Vacancy Center Pairs in Bulk Diamond by Molecular Nitrogen Implantation

Optimizing the formation of depth-confined nitrogen vacancy center spin ensembles in diamond for quantum sensing

Spin Properties of Very Shallow Nitrogen Vacancy Defects in Diamond

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

Molecular Dynamics Simulation Study of Nitrogen Vacancy Color Centers Prepared by Carbon Ion Implantation into Diamond

Long Spin Coherence Times of Nitrogen Vacancy Centres in Milled Nanodiamonds

Chip-scale nanofabrication of single spins and spin arrays in diamond

Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

Depth dependent decoherence caused by surface and external spins for NV centers in diamond