Optical and Spin Properties of NV Center Ensembles in Diamond Nano-Pillars
Kseniia Volkova,Julia Heupel,Sergei Trofimov,Fridtjof Betz,Rémi Colom,Rowan W. MacQueen,Sapida Akhundzada,Meike Reginka,Arno Ehresmann,Johann Peter Reithmaier,Sven Burger,Cyril Popov,Boris Naydenov
DOI: https://doi.org/10.3390/nano12091516
IF: 5.3
2022-04-29
Nanomaterials
Abstract:Nitrogen-vacancy (NV) color centers in diamond are excellent quantum sensors possessing high sensitivity and nano-scale spatial resolution. Their integration in photonic structures is often desired, since it leads to an increased photon emission and also allows the realization of solid-state quantum technology architectures. Here, we report the fabrication of diamond nano-pillars with diameters up to 1000 nm by electron beam lithography and inductively coupled plasma reactive ion etching in nitrogen-rich diamonds (type Ib) with [100] and [111] crystal orientations. The NV centers were created by keV-He ion bombardment and subsequent annealing, and we estimate an average number of NVs per pillar to be 4300 ± 300 and 520 ± 120 for the [100] and [111] samples, respectively. Lifetime measurements of the NVs’ excited state showed two time constants with average values of τ1 ≈ 2 ns and τ2 ≈ 8 ns, which are shorter as compared to a single color center in a bulk crystal (τ ≈ 10 ns). This is probably due to a coupling between the NVs as well as due to interaction with bombardment-induced defects and substitutional nitrogen (P1 centers). Optically detected magnetic resonance measurements revealed a contrast of about 5% and average coherence and relaxation times of T2 [100] = 420 ± 40 ns, T2 [111] = 560 ± 50 ns, and T1 [100] = 162 ± 11 μs, T1 [111] = 174 ± 24 μs. These pillars could find an application for scanning probe magnetic field imaging.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry