Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching (Adv. Electron. Mater. 6/2024)

Douglas Henrique Vieira,Gabriel Leonardo Nogueira,Leandro Merces,Carlos César Bof Bufon,Neri Alves
DOI: https://doi.org/10.1002/aelm.202470021
IF: 6.2
2024-06-11
Advanced Electronic Materials
Abstract:Oxide‐Based Electrolyte‐Gated Transistors ZnO‐based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co‐workers). The diode counterpart unveils a current–voltage relationship arising from space‐charge limited current, which undergoes continuous shift due to the field‐effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field‐effect.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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