Dual-Functional Long-Term Plasticity Emulated in IGZO-Based Photoelectric Neuromorphic Transistors

Yongli He,Sha Nie,Rui Liu,Shanshan Jiang,Yi Shi,Qing Wan
DOI: https://doi.org/10.1109/LED.2019.2908727
IF: 4.8157
2019-01-01
IEEE Electron Device Letters
Abstract:Indium–gallium–zinc-oxide (IGZO) photoelectric neuromorphic transistors with low-temperature atomic layer deposited Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate dielectrics are fabricated. Dual-functional long-term plasticity, including long-term depression (LTD) and long-term potentiation (LTP), is emulated. The emulation of LTD is achieved by applying high-electrical pulse trains on the gate electrode. The LTP emulation is realized by applying light pulse trains on the IGZO channel layer. The operation mechanisms of the LTD and the LTP are discussed based on the electron/hole trapping in the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate dielectrics and the persistent photoconductivity of the IGZO channel layer.
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