n-Type Ion Gel Gated Vertical Organic Electrochemical Transistors Based on Benzodifurandione-based Oligo( p -phenylene vinylene)s

Sang Young Jeong,Sung Hyeon Park,Jooho Park,Jung Woo Moon,Jeong Ho Cho,Han Young Woo
DOI: https://doi.org/10.1016/j.dyepig.2024.112201
IF: 5.122
2024-05-08
Dyes and Pigments
Abstract:Organic electrochemical transistors (OECTs) using aqueous gate dielectrics have garnered significant interest for bioelectronic applications. However, their viability for long-term use in neuromorphic computing and synaptic devices is limited due to their short-term functionality. In this study, we synthesize two benzodifurandione-based oligo( p -phenylene vinylene) polymers, BDOPV-TCNVT and ClBDOPV-TCNVT, and investigate their electrochemical transistor properties using quasi-solid-state ion gel-gated vertical OECTs ( v -OECTs). Compared to BDOPV-TCNVT, the chlorinated ClBDOPV-TCNVT demonstrates lower frontier molecular orbitals and easier electrochemical doping. The higher volumetric capacitance of as-spun ClBDOPV-TCNVT (1.94 F cm -3 ) compared to as-spun BDOPV-TCNVT films (1.49 F cm -3 ) is mainly attributed to the easier ion infiltration resulting from its lower crystallinity with mixed chain orientation. The quasi-solid-state v -OECTs based on both polymers (as-spun) exhibit transconductance ( g m ) of 0.06∼0.08 mS. Following thermal treatments, the g m gradually decreases for both polymers due to enhanced edge-on ordering with tight interchain packing, hindering ion penetration. Despite the poor electrochemical doping by quasi-solid-state ion gel gated dielectrics, the enlarged area and decreased channel length in v- OECTs (compared to parallel OECTs) can enhance the g m . Further optimization of v- OECTs requires tailored material designs specifically suited for efficient vertical charge transport together with ion infiltration.
engineering, chemical,chemistry, applied,materials science, textiles
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