Abstract:Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties1,2,3,4,5,6,7,8,9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping10,11,12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi2Te3, Sb2Te3 and Bi2Se3, has been explored extensively by means of material doping8,9,11 and electrical gating13,14,15,16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (BixSb1–x)2Te3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (BixSb1–x)2Te3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. The bulk conductivity of a topological insulator composed of Bi, Sb and Te can be reduced by orders of magnitude by tuning the ratio of Bi to Sb, allowing surface states to dominate conduction.

Photo-electrochemical effects in topological insulator Sb2Te3 thin films

High-performance Photothermal Effect in MOCVD Grown Topological Insulator Sb2Te3 Nanograting

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

Atomically smooth ultrathin films of topological insulator Sb<sub>2</sub>Te<sub>3</sub>

Study of dielectric polarization and electrical transport in Bi1·2Sb0·8Te0·4Se2.6 nanofilms

Spatial Distribution of Photo-Induced Anomalous Hall Effects of the Top and Bottom Surface States in Topological Insulators Sb2Te3

Topological Insulator Sb2Te3 Thin Films Grown by MBE

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Observing Electronic Structures on Ex-Situ Grown Topological Insulator Thin Films

Helicity-dependent Photocurrent of the Top and Bottom Dirac Surface States of Epitaxial Thin Films of Three-Dimensional Topological Insulators Sb2Te3

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

The Synthesis and Tunable Topological Properties of Sm-doped (bi, Sb)2Te2S Crystal

Giant Photoinduced Anomalous Hall Effect of the Topological Surface States in Three Dimensional Topological Insulators Bi2Te3

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.

Tuning of Circular Photogalvanic Effect of Surface States in the Topological Insulator Sb2Te3 Via Structural Deformation

Modulation of crystal and electronic structures in topological insulators by rare-earth doping

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Van der Waals epitaxial growth of topological insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb2Te3 Nanowires