Abstract:The key impact and significance of a multilayer polymer-based dielectric system on the remarkable photoresponse properties of zinc phthalocyanine (ZnPc)-based photosensitive organic field-effect transistors (PS-OFETs) have been systematically analyzed at various incident optical powers. A combination of inorganic aluminum oxide (Al2O3) and organic nonpolar poly(methyl methacrylate) (PMMA) is used as the bilayer dielectric configuration, whereas in the trilayer dielectric system, a bilayer polymer dielectric, consisting of PMMA, as the low-k dielectric polymer, on top of poly(vinyl alcohol) (PVA), the high-k polar dielectric, has been fabricated along with Al2O3 as the third layer. Before fabricating the OFETs, a systematic optimization of the nature of growth of the ZnPc molecules, deposited on PMMA-coated glass substrates at different substrate temperatures (T s) was performed and examined by atomic-force microscopy, field-emission scanning electron microscopy, X-ray diffraction, and Raman analysis. At 90 °C, the fabricated PS-OFETs with the Al2O3/PVA/PMMA trilayer dielectric configuration showed the best p-channel behavior, with an enhanced and remarkable photoresponsivity of R ∼ 9689.39 A W-1 compared to that of the Al2O3/PMMA bilayer dielectric system (R ∼ 2679.40 A W-1) due to the polarization of the dipoles inside the polar PVA dielectric, which increases the charge transport through the channel. The charge carrier mobility of the device also improved by one order (μh ∼ 1.3 × 10-2 cm2 V-1 s-1) compared to that of the bilayer dielectric configuration (μh ∼ 3.5 × 10-3 cm2 V-1 s-1). The observed specific detectivity (D*) and NEP values of the bilayer dielectric system were 6.01 × 1013 Jones and 2.655 × 10-17 W Hz-1/2, whereas for the trilayer dielectric system, the observed D* and NEP values were 5.13 × 1014 Jones and 1.043 × 10-17 W Hz-1/2, respectively. Additionally, the operating voltage of each of the fabricated devices was also very low (-10 V) due to the influence of the inorganic high-k Al2O3 dielectric layer. The electrical stability of all of the fabricated devices was also investigated by bias stress analysis under both light and dark conditions in vacuum. To the best of our knowledge, the photoresponsivity (R) reported here with an Al2O3/PVA/PMMA trilayer dielectric configuration is the highest reported value for thin film-based PS-OFETs, at a remarkably low operating voltage of -10 V, on low-cost glass substrates without indium tin oxide or/and Si/SiO2.

Optical properties of prussian blue thin films and electrical characteristics of Ag/prussian blue/p-Si/Al photodetectors for low-optical power latch-switching applications

Resistive Switching in Electrodeposited Prussian Blue Layers

Unveiling the electrochromic mechanism of Prussian Blue by electronic transition analysis

Electro-Optic Polymer Assisted Optical Switch Based on Silicon Slot Structure

Integration of biocompatible Coomassie Brilliant Blue dye on silicon in organic/Inorganic heterojunction for photodetection applications

Poly(dithiazolfluorene- Alt-Selenadiazolobenzotriazole)-based Blue-Light Photodetector and Its Application in Visible-Light Communication.

Poly-3-Methyl Aniline-Assisted Spherical PbS Quantum Dots through the Ionic Adsorption Deposition Method as a Novel and Highly Efficient Photodetector in UV, Vis, and NIR Regions

Aluminum-doped zinc oxide thickness controllable wavelengths in visible light and high responsivity devices using interrupted flow atomic layer deposition

Prussian Blue-Cobalt Oxide Double Layer for Efficient All-Inorganic Multicolor Electrochromic Device

Comprehensive study on the optoelectronic properties of ZnSnP2 compound by DFT and simulation for the application in a photodetector

Opto-electrical evaluation of visible blind fast-response nanostructured SnO2/Si photodetector

High-performance visible-near IR photodetectors based on high-quality Sn2+-sensitized PbS films

Engineering the Morphology and Component via Multistep Deposition of CsPbBr3 Films toward High Detectivity and Stable Self‐Powered Photodetectors

Vertically Stacked Au/PbS/CsPbCl 3 Phototransistors for Plasmon-Enhanced High-Performance Broadband Photodetection

Optoelectric response of Schottky photodiode with a PVP: ZnTiO 3 nanocomposite as an interfacial layer

High-Performance ZnPc Thin Film-Based Photosensitive Organic Field-Effect Transistors: Influence of Multilayer Dielectric Systems and Thin Film Growth Structure

Electrically Detectable Photoinduced Polarization Switching in a Molecular Prussian Blue Analogue

Fabrication of enhanced performance Visible-light photodetector based on Ag/ZnS/p-Si/Ag heterojunction grown by chemical bath deposition

A new high-performance blue to transmissive electrochromic material and use of silver nanowire network electrodes as substrates

Improving the electrochromic performance of prussian blue (PB) thin films by using an innovative electrothermophoresis method

An investigation of n-type semiconductors based on optical and photoluminescence of pure and Al doped Pr:123 compound